To expand on this, on the surface, it seems impractical but why would the recommendation be for industrialization? We know the main advantages of SSMB EUV would be much higher power than LPP EUV along with narrow spectrum, continuous wave radiation that is almost laser like.
This is a thought experiment but if I were to take a wild guess, I would say they are researching a next generation EUV lithography machine with source power approaching or exceeding 1000 watts and because such continuous wave radiation does so much less damage to the optics, that such EUV light could be split into multiple exposure chambers similar to how white light splits from a prism except the purpose would be to have more exposure zones for increased throughput. In this scenario, even a huge synchrotron sized light source would make sense if it were the equivalent of 5-20 ASML EUV lithographs. Note that continuous wave radiation would provide far more efficient EUV delivery to the wafer so source power from say 250w from SSMB EUV would be far superior to 250w source power from LPP EUV. This is all speculation of course.