News on China's scientific and technological development.
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NAND flash from Yangtze Memory and DRAM from Changxin Memory are already available.
It is just a matter of time all of these blood sucking China bashing foreign semiconductor companies will bleed dry
from China market.
First China-Built DRAM Chip Reaches Market
By He Shujing and Han Wei / Jun 12, 2020 04:27 AM /
picture
China’s first domestically built DRAM chips, developed by ChangXin Memory Technologies Inc., reached the market in a step forward in the country’s long-pursued effort to enter a lucrative electronic sector dominated by foreigners.
Several memory devices powered by ChangXin’s DRAM chips have appeared on the domestic market since May. Leading flash storage producer Shenzhen Longsys Electronics Co. Ltd. said May 15 that ChangXin’s chips passed related tests and would equip three of its storage products.
ChangXin’s chips have met basic criteria but may still fall short of capability requirements of higher-end customers compared with products of industry leaders, an analyst said. DRAM chips, for dynamic random access memory, are essential building blocks for storing information in most electronic devices such as computers and smartphones.
ChangXin is among a handful of Chinese chipmakers exploring DRAM production and has invested 15 billion yuan in the campaign. Most of the world’s DRAM and NAND, the other major kind of memory, are currently produced by South Korea’s Samsung and SK Hynix, as well as U.S. producer Micron Technology, which collectively control 90% of the global market.
It is just a matter of time all of these blood sucking China bashing foreign semiconductor companies will bleed dry
from China market.
First China-Built DRAM Chip Reaches Market
By He Shujing and Han Wei / Jun 12, 2020 04:27 AM /
picture
China’s first domestically built DRAM chips, developed by ChangXin Memory Technologies Inc., reached the market in a step forward in the country’s long-pursued effort to enter a lucrative electronic sector dominated by foreigners.
Several memory devices powered by ChangXin’s DRAM chips have appeared on the domestic market since May. Leading flash storage producer Shenzhen Longsys Electronics Co. Ltd. said May 15 that ChangXin’s chips passed related tests and would equip three of its storage products.
ChangXin’s chips have met basic criteria but may still fall short of capability requirements of higher-end customers compared with products of industry leaders, an analyst said. DRAM chips, for dynamic random access memory, are essential building blocks for storing information in most electronic devices such as computers and smartphones.
ChangXin is among a handful of Chinese chipmakers exploring DRAM production and has invested 15 billion yuan in the campaign. Most of the world’s DRAM and NAND, the other major kind of memory, are currently produced by South Korea’s Samsung and SK Hynix, as well as U.S. producer Micron Technology, which collectively control 90% of the global market.
NAND flash from Yangtze Memory and DRAM from Changxin Memory are already available.
It is just a matter of time all of these blood sucking China bashing foreign semiconductor companies will bleed dry
from China market.
First China-Built DRAM Chip Reaches Market
By He Shujing and Han Wei / Jun 12, 2020 04:27 AM /
picture
China’s first domestically built DRAM chips, developed by ChangXin Memory Technologies Inc., reached the market in a step forward in the country’s long-pursued effort to enter a lucrative electronic sector dominated by foreigners.
Several memory devices powered by ChangXin’s DRAM chips have appeared on the domestic market since May. Leading flash storage producer Shenzhen Longsys Electronics Co. Ltd. said May 15 that ChangXin’s chips passed related tests and would equip three of its storage products.
ChangXin’s chips have met basic criteria but may still fall short of capability requirements of higher-end customers compared with products of industry leaders, an analyst said. DRAM chips, for dynamic random access memory, are essential building blocks for storing information in most electronic devices such as computers and smartphones.
ChangXin is among a handful of Chinese chipmakers exploring DRAM production and has invested 15 billion yuan in the campaign. Most of the world’s DRAM and NAND, the other major kind of memory, are currently produced by South Korea’s Samsung and SK Hynix, as well as U.S. producer Micron Technology, which collectively control 90% of the global market.
Yeah, the first step of a long journey. I read that YMTC(Inntron) has problems with low yield due to the complicated Xtacking architecture.
CXMT is using iirc 17/19mm for DRAM, 2 generations behind Samsung/Hynix.
Still better than nothing when most industrialised nations don't even bother to be completely self-sufficient for tech supply.
These can be improved quickly. Remember, by the end of 2020 China will have over 500,000 ppl working in its semicon industries (700K is required by end of 2020). There is strength in numbers, they will work night and days, a year could be measured in months.
So how exactly are Yangtze and Changxin doing?
YMTC said they would be producing 128-layer in large numbers this year. Well, the fourth quarter is about arrive and it doesn't seem like that's happening?
CXMT also seems kind of slowed down. I think (correct me if wrong) that the leaders are at 10nm. CXMT's at 19nm and said they would be doing 17nm sometime... I'm still waiting.
I know America implemented equipment export restrictions in the middle of this year. Hopefully they didn't have an impact.
YMTC said they would be producing 128-layer in large numbers this year. Well, the fourth quarter is about arrive and it doesn't seem like that's happening?
CXMT also seems kind of slowed down. I think (correct me if wrong) that the leaders are at 10nm. CXMT's at 19nm and said they would be doing 17nm sometime... I'm still waiting.
I know America implemented equipment export restrictions in the middle of this year. Hopefully they didn't have an impact.
According to the latest enterprise investigation information, Huawei Electric Technology Co., Ltd.
It has been established with a registered capital of 250 million RMB and the legal representative is Wang Jun.
The business scope of the company includes: Engineering and technical research and experimental development; intelligent electric vehicle equipment sales; intelligent electric vehicle equipment manufacturing; intelligent electric vehicle equipment sales.
Huawei Electric Technology Co., Ltd. is 100% owned by Huawei Technology Co., Ltd.
It has been established with a registered capital of 250 million RMB and the legal representative is Wang Jun.
The business scope of the company includes: Engineering and technical research and experimental development; intelligent electric vehicle equipment sales; intelligent electric vehicle equipment manufacturing; intelligent electric vehicle equipment sales.
Huawei Electric Technology Co., Ltd. is 100% owned by Huawei Technology Co., Ltd.
The reasonable actual product rollout for 128layer should be earliest by Q3 2021. Remember 64layer was announced around Sept 2019, it took approximately one year till today.
US does not require a real valid reason to put them all into the entity list, they can simply quote these SSD and DRAM as "chip technology that can potentially empower the PLA" then sanction them for endangering US national security. The past 2 years already show us it is the end that matters.
..new study says U.S. in fifth place behind Japan, South Korea, Europe and China in terms of the number of international patents in battery technology...
One area the U.S. is strong in is potential next-generation batteries, the study says. The U.S. is the leader with 36% of patents on lithium-nickel-cobalt-aluminum-oxide chemistry for Li-ion batteries, which are already being used by Panasonic and Tesla.
The U.S. trails only Japan in patents for solid-state Li-ion battery patents, and is the leader with nearly a third of all patent applications in Redox flow batteries.
One area the U.S. is strong in is potential next-generation batteries, the study says. The U.S. is the leader with 36% of patents on lithium-nickel-cobalt-aluminum-oxide chemistry for Li-ion batteries, which are already being used by Panasonic and Tesla.
The U.S. trails only Japan in patents for solid-state Li-ion battery patents, and is the leader with nearly a third of all patent applications in Redox flow batteries.