Inner Mongolia in China lithography supply chain.
Chinese semiconductor thread II
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Inner Mongolia in China lithography supply chain.
A Pathway to High-Quality Heteroepitaxial Ga2O3 Films via Metalorganic Chemical Vapor Deposition.
Abstract
This work systematically investigates the heteroepitaxial growth of β-Ga2O3 thin films under varied substrate and temperature conditions via metalorganic chemical vapor deposition (MOCVD). Comprehensive characterization reveals that both the substrate type and growth temperature significantly influence the crystalline quality, surface morphology, chemical composition, and defect structure. Films grown at higher temperatures generally exhibit superior crystallinity and closer-to-stoichiometry composition, and thus suggest a reduction in oxygen deficiency. Certain substrates are shown to facilitate high-quality epitaxial growth with smooth surfaces and excellent crystallographic alignment. These findings offer key insights into optimizing growth parameters for high-performance β-Ga2O3-based devices.
Precision Microenvironment-Driven Isothermal Annealing for the Self-Assembly of Perpendicular Block Copolymers in High-Resolution Lithography Applications.
Abstract:
Block copolymer (BCP) nanolithography offers potential beyond traditional photolithographic limits, yet reliably producing low-defect, perpendicular domains remains challenging. We introduce a microenvironment-driven isothermal annealing method for directed self-assembly of BCP thin films. By annealing films at stable temperature in a quasi-sealed, inert-gas chamber, our approach promotes highly uniform perpendicular lamellar nanopatterns over large areas, effectively mitigating environmental fluctuations and emulating solvent-vapor annealing without solvent exposure. Resulting BCP structures demonstrate enhanced spatial coherence and notably low defect density. Furthermore, we successfully transfer these nanopatterns into precise metal nano-line arrays, confirming the method’s capability for high-fidelity pattern replication. This scalable, solvent-free technique provides a robust, reliable route for high-resolution nanopatterning in advanced semiconductor manufacturing.
