Chinese semiconductor thread II
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Settlement means neither side lost or win the case
美光科技与福建晋华达成全球和解
美国半导体公司美光科技和中国国企福建晋华已达成全球和解。据彭博社报道，美光科技发言人星期天（12月24日）在一份媒体电邮声明中说，已与福建省晋华集成电路有限公司达成全球和解协议。
发言人称，“两家公司将在全球范围内各自撤销对对方的起诉，结束双方之间的所有诉讼”，但拒绝提供更多细节。
福建晋华成立于2016年，由福建省电子信息集团、晋江能源投资集团有限公司等共同出资，通过与台湾联华电子技术（联电）合作，建立了这个专门制造动态随机存取存储器（DRAM）内存的企业。
2017年12月，美光在美国加州联邦法庭起诉福建晋华和联电，称联电通过美光台湾员工窃取其知识产权，包括DRAM的关键技术，并交付福建晋华。
Micron Technology reaches a global settlement with Fujian Jinhua
American semiconductor company Micron Technology and Chinese state-owned enterprise Fujian Jinhua have reached a global settlement.
According to Bloomberg, a spokesperson for Micron Technology said in a media email statement Sunday (December 24) that it had reached a global settlement agreement with Fujian Jinhua Integrated Circuit Co., Ltd.
The spokesperson said that "the two companies will each withdraw their lawsuits against each other globally and end all lawsuits between the two parties", but refused to provide more details.
Fujian Jinhua was established in 2016 and was jointly funded by Fujian Electronic Information Group, Jinjiang Energy Investment Group Co., Ltd. and others. Through cooperation with Taiwan Unihua Electronic Technology (UNP), it has established this enterprise specializing in the manufacturing of dynamic random access memory (DRAM) memory.
In December 2017, Micron sued Fujian Jinhua and UMC in a federal court in California, claiming that UMC stole its intellectual property rights, including key DRAM technologies, through Micron's Taiwanese employees, and delivered them to Fujian Jinhua.
No. Fujian Jinhua likey won. Their lawsuit against micron was counter suit against microns initial lawsuit.
Micron went on the attack, Fujian fought back, making micron back off their initial lawsuit
Especially since the US DOJ lost against Fujian, Micron decided to pull back. So semantics doesn't matter. Micron essentially lost their lawsuit.
The Reuters article clearly states JHICC was found not guilty of wrongdoing. Micron lost the case it is as simple as that. And they lost in a US court.
This was the main legal lawsuit. And they lost.
Of course what you got in the Western media, and this video, is how UMC had to fork out money for one of its employees taking some files from his previous job with him. And that they had to comply with US investigations on the matter. But that doesn't mean those files either reached or were used in work they made for JHICC. Or that JHICC asked for this to be done.
They clearly failed to prove that.
This was the main legal lawsuit. And they lost.
Of course what you got in the Western media, and this video, is how UMC had to fork out money for one of its employees taking some files from his previous job with him. And that they had to comply with US investigations on the matter. But that doesn't mean those files either reached or were used in work they made for JHICC. Or that JHICC asked for this to be done.
They clearly failed to prove that.
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Asianometry is Taiwanese and is friends with SemiAnalysis founder Dylan. They don't look for information that disagrees with their worldview.
Here’s a more detailed presentation on this ADC chip. Talks about Wassenaar restrictions on ADC, applications in telecom, radar/EW, medical device, AI optical interconnects and instruments. Fabbed and packaged by domestic fabs (likely 28nm), which requires specialized mixed signal 28nm process, not your ordinary logic cmos process
yes, this is very big deal.
Interesting enough, they also talked about a 8-bit 64 GSPS ADC chip that can operate in 29GHz range, also 28nm process. and has started mass production.
Chinese Academy of Sciences has made important progress in artificial intelligence-driven atomic-level process simulation
In the manufacturing of three-dimensional integrated circuit transistors at technology nodes below 2nm, key links such as inner sidewalls, channel release, and dielectric isolation urgently need to break through high-precision etching processes to achieve size miniaturization and device performance improvement. When the feature size enters the nanoscale, the etching reaction cross section shows a significant size effect. Microscopic physical phenomena such as reaction cross sections and defects are difficult to obtain through traditional characterization methods. Although the existing etching model can predict the evolution of macroscopic morphology, it has fundamental limitations at the nanoscale. How to combine cutting-edge artificial intelligence technology to simulate the etching dynamics process with atomic-level accuracy, understand its microstructural evolution process, and then predict and optimize macroscopic process parameters to achieve target device performance is a key scientific issue in artificial intelligence-enabled integrated circuit advanced manufacturing.
In response to the above problems, Chen Rui, a researcher at the EDA Center of the Institute of Microelectronics of the Chinese Academy of Sciences, and Li Junjie, a senior engineer at the Pioneer Center, collaborated to introduce the Machine Learning Potential (MLP) molecular dynamics deduction method into the field of integrated circuit etching process simulation for the first time, deeply explored the etching mechanism from the atomic scale, and used machine learning potential to achieve large-scale deduction of macroscopic etching profiles. This study is aimed at the lateral selective etching process scenario of the superlattice structure of the ring gate (GAA) device, introduced process physical constraints, combined with the neural network evolution algorithm, and constructed a machine learning potential function. This potential function has simulation results that are highly consistent with the density functional theory (DFT) calculation results.
This potential function was used to simulate the lateral selective etching process of Si/SiO2 variable thickness multi-layer structure, and the molecular dynamics etching profile deduction of a large system at the 600,000-atom level was successfully achieved. At the same time, this study completed the tape-out experiment of the corresponding structure on the 8-inch pilot process platform of the Institute of Microelectronics, and combined with transmission electron microscopy (TEM) characterization to verify the correctness of the simulation results. Compared with the traditional reaction force field molecular dynamics (ReaxFF MD) simulation method, this method achieved a computational efficiency improvement of about 45 times.
Nuotian Silicon Carbide Semiconductor Equipment and Substrate Production Base Project with an investment of RMB 150 million was put into production
The total investment of the Nuotian silicon carbide semiconductor equipment and substrate production base project is about 150 million yuan. It was signed and settled in Zhuzhou High-tech Zone in February 2024. The project mainly produces silicon carbide semiconductor equipment and substrates. The products are widely used in silicon carbide single crystal growth and substrate manufacturing, semiconductor material graphitization and purification processing, advanced ceramics and composite materials research and development, photovoltaics, high-temperature sintering in lithium battery fields, etc.
The project was invested and constructed by Zhuzhou Nuotian Electric Heating Technology Co., Ltd. Founded in 2014, the company focuses on the research and development, manufacturing and innovation of high-end thermal equipment, and is committed to providing high-performance, high-reliability industrial furnace equipment and full-process solutions for cutting-edge fields such as global semiconductors, new energy, and new materials. In 2024, the company became a national high-tech enterprise; in 2025, the company was rated as a specialized, refined, and innovative enterprise in Hunan Province.
The person in charge of the company said that Zhuzhou Hi-tech Zone, with its superior location, complete industrial chain, open and inclusive business environment, and pragmatic and efficient government services, has allowed the company to deeply feel the "Zhuzhou speed" and "Zhuzhou temperature". After the project is put into production, the company will make every effort to ensure production operations, continue to deepen technological innovation, and quickly achieve full production, stable production, and high-quality production, contributing to the economic and social development of Zhuzhou and the progress of China's electric heating industry.
The project was invested and constructed by Zhuzhou Nuotian Electric Heating Technology Co., Ltd. Founded in 2014, the company focuses on the research and development, manufacturing and innovation of high-end thermal equipment, and is committed to providing high-performance, high-reliability industrial furnace equipment and full-process solutions for cutting-edge fields such as global semiconductors, new energy, and new materials. In 2024, the company became a national high-tech enterprise; in 2025, the company was rated as a specialized, refined, and innovative enterprise in Hunan Province.
The person in charge of the company said that Zhuzhou Hi-tech Zone, with its superior location, complete industrial chain, open and inclusive business environment, and pragmatic and efficient government services, has allowed the company to deeply feel the "Zhuzhou speed" and "Zhuzhou temperature". After the project is put into production, the company will make every effort to ensure production operations, continue to deepen technological innovation, and quickly achieve full production, stable production, and high-quality production, contributing to the economic and social development of Zhuzhou and the progress of China's electric heating industry.