A research team led by Xu Xiangang at Shandong University has developed a novel single-crystal diamond bulk growth strategy that achieves large size, high uniformity, and excellent crystal quality—without polycrystalline edge formation (PCD rim). They identified the
R value (ratio of substrate area to holder exposed area) as a key factor influencing crystal morphology and stability during thick-film chemical vapor deposition (CVD) growth. Optimal performance was found when R is between
0.6 and 0.79, ensuring stable plasma, electromagnetic field, and radical distributions, which promotes lateral expansion and suppresses edge PCD growth.
Combined with a temperature range of
880–920°C, this method enabled the growth of an 8.79 × 8.78 × 4.5 mm single-crystal diamond bulk from a small 7×7×0.5 mm substrate, maintaining a consistent triangular step-flow structure throughout. Raman and XRD analyses showed high crystal quality (FWHM ~2.0 cm⁻¹ and ~74.8 arcsec), comparable to commercial-grade materials. Crucially, cutting the bulk into seven layers retained excellent uniformity in stress, impurity levels, and crystallinity.
Device testing revealed hydrogen-terminated diamond field-effect transistors (FETs) with a maximum current density of
90–107 mA/mm, electron mobility of
76–89 cm²/V·s, and an on/off ratio of ~10⁹—showing consistent performance across all wafers.
This work presents a practical, scalable path for producing large-scale, high-quality single-crystal diamond with no edge defects, making it promising for
high-power electronics, radio frequency devices, and quantum technologies. The findings advance the transition of diamond materials from lab-scale to industrial applications.