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Deleted member 15949
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Hey, could you provide a timeline on when indigenous 28nm, 14nm and 7nm can come online?
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Chinese semiconductor industry
- Thread starter Hendrik_2000
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Mass production of 28nm will be in late 2021 or early 2022.Hey, could you provide a timeline on when indigenous 28nm, 14nm and 7nm can come online?
14nm Localised Production line should be ready by 2022/23.
But ICRD is already planning to run a 14nm/16nm Domestic Equipment Trial Line in late 2021, so it could be much sooner for 14nm.
7nm Domestic Production Line will come soon after the 14nm Line is established.
In fact 7nm Chips can be produced using 14nm Equipment with minimal changes required.
@WTAN Sir, if the ICRD is able to verify the 14nm line and is successful within this year, then a parallel line of 28nm and 14nm can be produce concurrently?Mass production of 28nm will be in late 2021 or early 2022.
14nm Localised Production line should be ready by 2022/23.
But ICRD is already planning to run a 14nm/16nm Domestic Equipment Trial Line in late 2021, so it could be much sooner for 14nm.
7nm Domestic Production Line will come soon after the 14nm Line is established.
In fact 7nm Chips can be produced using 14nm Equipment with minimal changes required.
Possibly.@WTAN Sir, if the ICRD is able to verify the 14nm line and is successful within this year, then a parallel line of 28nm and 14nm can be produce concurrently?
ICRD seems pretty keen on getting the 14nm Line up and running as soon as possible.
But i think the 14nm line will still come on line shortly after the 28nm.
Noobie question: Is the UV spectrum the shortest spectrum that can be used in litophotographic equipment? Any chances of using shorter wavelengths, such as x-ray or even gamma rays?
X-ray lithography was investigated at one point, like until the late 1980s, but they couldn't solve the problems. Like what would you use instead of lenses. It is theoretically possible and would be able to etch finer details than EUV.
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Deleted member 15949
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Yeah, high-NA (0.55) EUV is going to be the end of fab equipment innovation. You might be able to squeeze a bit more innovation out of gate stacking and a big more out of design but by and large, most of the innovation related to ICs is done.X-ray lithography was investigated at one point, like until the late 1980s, but they couldn't solve the problems. Like what would you use instead of lenses. It is theoretically possible and would be able to etch finer details than EUV.
Skywatcher
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There's some research being done on 6.7nm wavelength LPP (using rare earths instead of tin) lithography (including China), and maybe SSMB could produce that wavelength too, but photoresists and optics would probably be a major challenge.
Thanks to gelgoog, SleepyStudent and Skywatcher.
If I understand correctly, in EUV the mirroring process absorbs about 96% of the available light thereby not only reducing the usefulness of the light source but also heating the mirrors themselves and consequently making them not too sharp.
So, if a better optical system is developed, could a less powerful lighting system, such as the one used in DUV equipment, suffice? Maybe the secret is more in improving the reflectiveness of the mirrors, than the light source.
If I understand correctly, in EUV the mirroring process absorbs about 96% of the available light thereby not only reducing the usefulness of the light source but also heating the mirrors themselves and consequently making them not too sharp.
So, if a better optical system is developed, could a less powerful lighting system, such as the one used in DUV equipment, suffice? Maybe the secret is more in improving the reflectiveness of the mirrors, than the light source.
The bigger challenge with going even shorter wavelength by far is going to be photon count output. The shorter you go on the wavelength scale the more energy you need to generate the same number of photons, and for exposure purposes it’s the amount of photons you can deliver to your wafers that ultimately matter. Going higher energy on your excitation mechanics also puts greater burdens on how you handle your photon generation source material. For LPP specifically this probably means you need a more powerful excitation laser, which then introduce more challenging kinetic interactions on your source droplets. This is what made the photonics part of EUV so challenging, and it only gets worse as you get more ambitious with wavelength.There's some research being done on 6.7nm wavelength LPP (using rare earths instead of tin) lithography (including China), and maybe SSMB could produce that wavelength too, but photoresists and optics would probably be a major challenge.
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