Chinese semiconductor thread II

[tokenanalyst]

Xi'an University of Electronic Science and Technology's Academician Hao Yue's team: New breakthrough in gallium oxide RF device research!​

A research team from Xidian University, led by Academician Hao Yue, Professors Zhang Jincheng and Zhou Hong, published a breakthrough study in Science Advances on heterogeneous integration of ultrawide bandgap (UWBG) semiconductors for high-performance radio frequency (RF) power devices.

UWBG materials like Ga₂O₃, AlN, and diamond offer excellent properties such as high critical electric field and saturation electron velocity but face challenges in simultaneously achieving shallow-level doping and high thermal conductivity. Existing integration methods suffer from small film sizes, material damage, and poor thermal interface.

The team developed a novel, scalable peel-off-based layer transfer technique, combining mechanical exfoliation, array transfer, and wafer-level direct bonding. This approach enables large-area, uniform doping of gallium oxide (Ga₂O₃) films on high-thermal-conductivity aluminum nitride (AlN) substrates—without requiring ion implantation or dielectric interfaces.

T-gate RF power transistors achieve:​

• Output power densities: 4.6 W/mm² at 2 GHz, 4.1 W/mm² at 6 GHz​
• Maximum oscillation frequency: 90 GHz (highest reported for UWBG devices)​
• Minimum noise figure: 0.48 dB at 8 GHz (among the lowest in this class)​

The large conduction band offset (3.4 eV) at the Ga₂O₃/AlN interface enhances electron confinement, boosting device performance.

This method offers a promising path for next-generation RF devices in communications, aerospace, and defense by enabling high efficiency, power density, and thermal stability through heterogeneous integration of complementary UWBG materials.

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[tokenanalyst]

Southchip Technology launches 700V high-voltage GaN half-bridge power chip, providing a more efficient and reliable solution for industrial power supplies.​

Southchip Technology has launched the SC3610, a 700V GaN half-bridge power chip, targeting high-efficiency, compact industrial power supplies. The chip integrates two 700V enhancement-mode GaN FETs and a high-voltage isolated driver, offering precise voltage drive, superior channel delay matching, and enhanced EMI performance. It enables soft-switching in LLC and AHB topologies, improving efficiency and reliability for applications like AI server power supplies, industrial power systems, and motor drives.​

• Reduced system cost and PCB footprint​
• Precise internal timing to minimize dead time and avoid cross-conduction​
• Improved reliability with UVLO, over-temperature, shutdown, and interlock protections​

The SC3610 marks Southchip’s entry into the industrial power supply market through key products LLC SR controller and this half-bridge chip now undergoing validation with leading clients. It aligns with the trend of miniaturization and high-efficiency power conversion in industrial electronics.

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[tokenanalyst]

Not Advocating, Just For Information Purposes. ​

The first domestically produced GPU stock is now open for subscription!​

On November 24th, Moore Threads (688795.SH), dubbed the "first domestic GPU stock," launched its IPO on the Science and Technology Innovation Board (STAR Market). According to the issuance schedule, the company's offering price is 114.28 yuan per share, with a total expected fundraising of 8 billion yuan, setting a new record for the most expensive IPO this year and also the largest fundraising scale on the STAR Market this year. Against the backdrop of the continued expansion of large-scale artificial intelligence models and computing infrastructure, the project has attracted significant attention from the secondary market and institutional investors.

The initial price inquiry attracted 286 offline investors and their 7,787 sub-investors, with bids ranging from RMB 88.79 to RMB 159.57 per share, indicating high institutional participation. After removing invalid bids, the issuer and lead underwriter set the offering price at RMB 114.28 per share, in the upper part of the range. Based on this price, Moore Threads' 2024 diluted static price-to-sales ratio is approximately 122.51 times, and the company's total market capitalization after the offering is approximately RMB 53.715 billion, significantly higher than the average level of comparable companies.

Publicly available information shows that Moore Threads was founded in 2020, focusing on the R&D and industrialization of general-purpose GPUs and related acceleration chips. Positioning itself as "China's NVIDIA," it is one of the few domestic GPU manufacturers capable of providing full computational precision support from FP8 to FP64, and was also one of the earliest domestic GPU companies to launch support for the DirectX 12 graphics acceleration engine. The company has iterated and launched multiple generations of GPU architectures and intelligent SoC products, forming a product matrix covering AI computing, high-performance computing, and graphics rendering, achieving a full-stack layout from cloud to edge to device. However, its current market share in relevant niche markets is still less than 1%.

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[Proton]

Did you not read what the guy said after? Besides, it's not the full product, and it isn't in ideal conditions during the test either.

Also, if the information is accurate, it seems like Kirin 9030 has one additional mid core and is clocked around 10% higher than the Kirin 9020.

So even without any architectural improvement that's almost 10% single core performance over the 9020 and around 20% multi core performance (Assuming it doesn't do some extra downclocking under load.).

Results showing some 15% lower performance than the 9020 don't seem very accurate given this context.

 

[latenlazy]

I thought people here were looking up to Kirin 9030 as a general benchmark of domestic semiconductor technology and from the looks It's not good... Not really concerned of how the phone is but more concerned about how behind we are.

Praying it is either fake or suffering massive performance penalty due to using a emulator.

It’s an underclocked benchmark test. Please learn how these things work.

 

[Tomboy]

It’s an underclocked benchmark test. Please learn how these things work.

Which is why I'm saying (and hoping) it's both extremely underclocked and suffering massive penalties due to emulator

 

[Michael90]

However, its current market share in relevant niche markets is still less than 1%.

That’s quite low to almost nonexistent . Which niches are they talking about ?

 

[tphuang]

https://twitter.com/i/web/status/1993397387885261300

I posted all the product releases today. The base M80 version still uses K9020 SoC. All higher versions use K9030 or K9030 Pro. K9030 base is likely a binned version. It's unclear just how much better 9030 Pro is over 9020. We will need to wait a few days to find out from 3rd party testing.

The pads and high end phones use anywhere from 20GB to 32GB large DRAM. Given the recent constraint over DRAM supply, it is not surprising that M80 and Mate X7 supply maybe more constrained by DRAM vs Kirin chips.

 

[sunnymaxi]

Which is why I'm saying (and hoping) it's both extremely underclocked and suffering massive penalties due to emulator

the actual chip is K9030 Pro which uses in high end Mate80 version.. we have to wait for few days then we will get the actual performance result.

what we are talking about is base variant K9030..

 

[tphuang]

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The industry views this as the result of an all-out research and development (R&D) battle by deploying more than 1,000 memory semiconductor specialists recruited from Korea, Japan, and other countries based on Chinese government support. Analysis suggests that if China begins full-scale production of advanced DRAM, it will be a significant variable in the memory super boom triggered by supply shortages.

Korean news are bitter that CXMT has almost caught up to SK & Samsung due to recruiting of Koreans, lol

Currently, the technology gap between Korean and Chinese companies in the general-purpose DRAM market is evaluated as ‘within one year.’ The prevailing opinion is that the gap is maintained due to the impact of the United States blocking exports of equipment essential for DRAM circuit miniaturization, such as Netherlands ASML’s extreme ultraviolet (EUV) lithography equipment.

Remember when we use to say this gap was like 5 years? Well, in terms of process node, it's probably a lot larger than 1 year but in terms of the memory speed & such, it's basically negligible at this point.

China’s semiconductor rise is also fierce in the NAND flash sector. Yangtze Memory Technologies Co. (YMTC) recorded 13% global market share based on third quarter shipment volume, leading with 270-layer NAND flash at a level similar to Samsung’s (286 layers). It ranks fourth, closely following third-place Japan’s Kioxia (14%).

Look at this, apparently YMTC reached 13% share last quarter. Will have to wait for TechInsight/Trendforce report on this.