Jinghe Technology completes angel round financing to accelerate the industrialization of heterogeneous integrated equipment.
Suzhou Jinghe Semiconductor Technology Co., Ltd., incubated by the National Third Generation Semiconductor Technology Innovation Center (Suzhou) and Jiangsu Third Generation Semiconductor Research Institute, is a high-tech enterprise focusing on the independent research and development of heterogeneous integration of wide bandgap semiconductor materials and high-end equipment. With the mission of overcoming the international bottleneck technology of "room temperature ultra-high vacuum direct bonding," the company is committed to building a world-leading heterogeneous material integration technology platform and specialized equipment manufacturer.
The University of Electronic Science and Technology and Director of the National Third-Generation Semiconductor Technology Innovation Center (Suzhou) released the achievements of the Third-Generation Semiconductor Equipment Localization R Alliance .
Among them, the "Ultra-High Vacuum Room Temperature Direct Bonding Technology and Equipment" developed by the Jinghe Technology team led by Dr. Liang Jianbo was successfully selected. This equipment can achieve atomic-level interface bonding of semiconductor materials such as gallium nitride on 4-inch polycrystalline diamond and has already been promoted and applied in 11 units. To meet the greater market demand, Jinghe Technology is comprehensively advancing the R&D of 12-inch high-end models, targeting high-power RF chips, new energy vehicle electronic control modules, silicon photonic devices and advanced packaging, providing key support for heterogeneous integration technology in the post-Moore's Law era.
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he company's core product, the RTDB series of ultra-high vacuum room temperature direct bonding equipment, has successfully covered 2 to 8-inch models. It has overcome the challenges of thermal expansion mismatch, high interfacial thermal resistance, and low yield faced by bonding high thermal conductivity materials such as diamond, GaN, and SiC. Its key performance indicators have reached the international advanced level.
