Chinese semiconductor thread II

OptimusLion

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Scientists from Shanxi University have developed a dual-frequency laser interferometer ultra-precision measurement device with femtometer-level (1 nanometer = 1000 picometers, 1 picometer = 1000 femtometers) accuracy, which can fully meet the needs of EUV and even the next generation of EUV lithography machines.


Highly stable dual-frequency laser based on dual acousto-optic modulation


He Ziyang1An Bingnan1Wang Tao1Zhao Xiaokang1Liu Xiangsong1Chen Lirong1,2,3Wang Yajun1,2

1. National Key Laboratory of Quantum Photonics Technology and Devices, Institute of Optoelectronics, Shanxi University 2. Collaborative Innovation Center for Extreme Optics, Shanxi University 3. Shanxi Provincial Key Laboratory of Wireless Communication and Detection, Shanxi University

Abstract: High-stability dual-frequency laser light source is a key technology to achieve national ultra-precision measurement capabilities and a cornerstone to support the quality of high-end equipment manufacturing . Based on the dual-acoustic-optical modulation scheme, this paper builds a high-stability dual-frequency laser light source and its frequency difference stability evaluation system. By studying the mechanism of dual-frequency laser generation by dual-acoustic-optical modulation, the frequency difference stability degradation model is constructed step by step, and targeted technical improvements are made. Studies have shown that both the frequency stability of the dual-frequency laser light source and the dual-frequency frequency difference stability will affect the accuracy of heterodyne interferometry, and the dual-frequency frequency difference stability is determined by the stability of the RF signal and the nonlinear distortion of the power amplifier. By designing high-order harmonic filtering technology and a high-stability RF generator based on a rubidium clock, this paper optimizes the frequency difference stability to 9×10-11@1s and 6×10-10@1000s, and reduces the influence of the dual-frequency frequency difference stability on the heterodyne interferometry accuracy to the sub-femtometer level. At this point, the frequency difference stability index of the dual-frequency laser light source fully meets the application requirements of picometer-level laser interferometry. Combined with the most advanced ultra-stable cavity frequency stabilization technology, our highly stable dual-frequency laser light source can support heterodyne interferometry with picometer or even femtometer accuracy, and has important application prospects in fields such as ultra-precision measurement.

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OptimusLion

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The latest results of the pilot line of domestic immersion deep ultraviolet lithography machine: short-stroke positioning accuracy is 2nm, medium-stroke positioning accuracy is 3nm, and long-stroke positioning accuracy is 5nm

Shanghai Integrated Circuit Equipment and Materials Industry Innovation Center Co., Ltd.

Abstract: This paper discusses the problems of insufficient positioning accuracy and slow response speed in the existing lithography machine motion control system, and realizes nanometer-level precision control by optimizing the system architecture design and improving the PID control algorithm . The experimental results show that the optimized control system has significantly improved positioning accuracy, response time and stability.

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The Shanghai Integrated Circuit Research and Development Center has the only 12-inch integrated circuit advanced process research and development and domestic equipment and material evaluation and verification pilot line currently open in China. In 2020, two products were placed in the Shanghai Integrated Circuit Research and Development Center. Its R&D and production manufacturer is Shanghai Microelectronics Equipment from Zhangjiang. At present, the technology of these two devices is still a certain distance away from the most advanced equipment in the world, but their appearance also marks that China has achieved a zero breakthrough in the field of lithography machines.

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Since December 2019, the Shanghai Integrated Circuit Research and Development Center has applied to start building a national integrated circuit equipment and materials industry innovation center , striving to carry out special research on accessories for domestic equipment.

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pbd456

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Scientists from Shanxi University have developed a dual-frequency laser interferometer ultra-precision measurement device with femtometer-level (1 nanometer = 1000 picometers, 1 picometer = 1000 femtometers) accuracy, which can fully meet the needs of EUV and even the next generation of EUV lithography machines.


Highly stable dual-frequency laser based on dual acousto-optic modulation


He Ziyang1An Bingnan1Wang Tao1Zhao Xiaokang1Liu Xiangsong1Chen Lirong1,2,3Wang Yajun1,2

1. National Key Laboratory of Quantum Photonics Technology and Devices, Institute of Optoelectronics, Shanxi University 2. Collaborative Innovation Center for Extreme Optics, Shanxi University 3. Shanxi Provincial Key Laboratory of Wireless Communication and Detection, Shanxi University

Abstract: High-stability dual-frequency laser light source is a key technology to achieve national ultra-precision measurement capabilities and a cornerstone to support the quality of high-end equipment manufacturing . Based on the dual-acoustic-optical modulation scheme, this paper builds a high-stability dual-frequency laser light source and its frequency difference stability evaluation system. By studying the mechanism of dual-frequency laser generation by dual-acoustic-optical modulation, the frequency difference stability degradation model is constructed step by step, and targeted technical improvements are made. Studies have shown that both the frequency stability of the dual-frequency laser light source and the dual-frequency frequency difference stability will affect the accuracy of heterodyne interferometry, and the dual-frequency frequency difference stability is determined by the stability of the RF signal and the nonlinear distortion of the power amplifier. By designing high-order harmonic filtering technology and a high-stability RF generator based on a rubidium clock, this paper optimizes the frequency difference stability to 9×10-11@1s and 6×10-10@1000s, and reduces the influence of the dual-frequency frequency difference stability on the heterodyne interferometry accuracy to the sub-femtometer level. At this point, the frequency difference stability index of the dual-frequency laser light source fully meets the application requirements of picometer-level laser interferometry. Combined with the most advanced ultra-stable cavity frequency stabilization technology, our highly stable dual-frequency laser light source can support heterodyne interferometry with picometer or even femtometer accuracy, and has important application prospects in fields such as ultra-precision measurement.

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The question is probabaly if it can be engineered into an EUV stage, and how fast would it take and able to repeat it again and again?
 

ScarletMagician

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Hi, I thought I'd ask since its been a while since I last visited this thread; is there information on the alternatives to EUV that Chinese companies have been pursuing? I've been looking into that topic for a while and I hope things still have been progressing on that front.
 

tokenanalyst

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New method for polymer post-modification and new principle for the creation of positive photoresists - photocarboxylation reaction of alkynes.​


A the team of Professors from Shandong Normal University , together with the team of Researcher Zhou Jianrong from the Shenzhen Graduate School of Peking University , developed a photoinduced tandem reaction methodology for alkyne carboxylation, achieving three different selective carboxylation reactions of alkynes: 1,1-, 1,2-dicarboxylation and hydrocarboxylation. The solubility of cesium formate and the alkaline environment are the key factors for the reaction selectivity. In addition, the photoreaction was successfully applied to alkyne-containing polymers (such as polyimide and polystyrene) for carboxylation modification, significantly improving the water solubility of these polymers and preliminarily successfully simulating the photolithography process. The related work was published in Angew. Chem. Int. Ed. as "Unusual 1,1-Dicarboxylation Selectivity in the Domino Hydrocarboxylation of Alkynes with Formate and Application in Polyimides Photoresist" .

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measuredingabens

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Hi, I thought I'd ask since its been a while since I last visited this thread; is there information on the alternatives to EUV that Chinese companies have been pursuing? I've been looking into that topic for a while and I hope things still have been progressing on that front.
Tianren Micro appears to the Chinese frontrunner in nanoimprint lithography, though currently there is little noise on whether domestic fabs are considering adopting their tech. SSMB (being developed by Tsinghua) could potentially segue into X-ray litho, though that tech stack requires advancements in photoresists. There's research into LPP with gadolinium-generated EUV/soft x-ray rather than tin, but that is still in its early stages.
 
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