New heights of epitaxial equipment! NAURA compound epitaxial equipment leads the market boom
Recently, two MOCVD (metal organic chemical vapor deposition) epitaxial equipment (models: Satur N800/Satur V700) independently developed by NAURA successfully passed the acceptance of leading customers in the industry and received batch repeat orders.
Since NAURA started the research and development of epitaxial equipment in 2010, after more than ten years of technological accumulation and innovative breakthroughs, it has achieved full coverage of 4-inch to 12-inch silicon thin film epitaxial equipment. Its products include 8-inch and below single-wafer and multi-wafer large-capacity silicon epitaxial equipment and 12-inch silicon epitaxial equipment. It has achieved many technological innovations and industrialization results, with cumulative sales exceeding 1,000 cavities. It has won the "Beijing Science and Technology Progress First Prize", the first "National Excellent Engineer Team", "Beijing Model Collective" and other heavyweight honors, becoming a leader in China's silicon thin film epitaxial equipment field.
Relying on its profound accumulation in the field of silicon epitaxial equipment, North Huachuang has actively expanded the research and development of compound semiconductor epitaxial equipment, and has formed a series of products of epitaxial equipment for compound semiconductor materials such as GaN (gallium nitride), GaAs (gallium arsenide), and SiC (silicon carbide).
GaN MOCVD epitaxial equipment
NAURA GaN MOCVD epitaxial equipment, Satur N800, is designed for the special needs of 8-inch silicon-based GaN power devices. It features a large-area uniform temperature field, a large-range stable and adjustable gas flow field, and multi-chip (Batch) large production capacity and automated configuration, which can meet the high requirements of compound semiconductor advanced devices for epitaxial layer composition, thickness and doping uniformity. At present, Satur N800 has entered many domestic compound semiconductor clients, successfully passed chip verification and stable operation, achieved batch shipments, and continuously received repeat orders.
GaAs MOCVD epitaxial equipment
NAURA GaAs MOCVD epitaxial equipment, Satur V700, has successfully made breakthroughs in key technologies such as gas flow field, temperature field, and by-product control, and has the advantages of high uniformity, large production capacity, and low cost. This equipment can not only meet the pain point needs of the Micro LED industry, but can also be widely used in RF, optoelectronics and other fields. At present, Satur V700 has been shipped in batches to many customers and has passed strict chip verification. With its good performance, it continues to receive a large number of repeat orders from customers.
SiC epitaxial equipment
NAURA SiC epitaxial equipment, MARS iCE115/120S, features simple process debugging and convenient maintenance and operation, and quickly captured the market once it was launched. MARS iCE120S is compatible with 6/8-inch SiC epitaxy and has C2C capability, providing a good product choice for the market during the transition period when the SiC industry is shifting from 6-inch to 8-inch.
MARS iCE120S
As SiC epitaxial technology matures, NAURA has launched a multi-wafer 6/8-inch compatible SiC epitaxial product, Satur C960. The equipment uses a new independently developed temperature control architecture, vacuum exhaust system and multi-functional modular design, which can achieve 9 6-inch or 6 8-inch epitaxy in a single furnace. It has the advantages of high productivity, low cost and long uptime, further expanding the SiC epitaxial product market.
