Really interesting, this could push logic devices to operate under extreme current condictions.
The Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, has made a series of advances in gallium oxide vertical power devices through its nanofabrication platform.
Gallium oxide (Ga2O3), an ultrawide bandgap semiconductor, possesses advantages such as high critical breakdown field strength, high saturated electron drift velocity, intrinsic solar-blind ultraviolet response, and low-cost fabrication on large-size single-crystal substrates using fusible methods. In recent years, it has attracted widespread attention in power radio frequency electronics, deep ultraviolet detection, piezoelectricity, ferroelectricity, and intelligent sensing. The National 15th Five-Year Plan outlines the promotion of the industrialization of ultrawide bandgap semiconductors such as gallium oxide and diamond, further highlighting their strategic value. Vertical power devices, which utilize a vertical drift layer to handle high voltage while simultaneously increasing the current carrying capacity per unit chip area, are core devices for leveraging the performance advantages of gallium oxide.
Recently, the Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO) Nanofabrication Platform, in collaboration with the University of Science and Technology of China (USTC), Nanjing University, Henan Normal University, and the University of Electronic Science and Technology of China (UESTC), has made a series of advancements in gallium oxide vertical power devices. The research focuses on vertical fin field-effect transistors (FinFETs), current aperture vertical electron transistors (CAVETs), trench gate metal-oxide-semiconductor field-effect transistors (UMOSFETs), and Schottky barrier diodes (SBDs). Techniques developed include localized bottom dielectric electric field modulation, all-ion implantation planar processes, MOCVD sidewall re-epitaxy, HF sidewall wet processing, buried field shielding, and composite edge termination. The relevant results will be published at the 38th IEEE International Symposium on Power Semiconductor Devices and Integrated Circuits in 2026.nal Symposium on Power SemicoInductor Devices and ICs, ISPSD), Applied Physics Letters, etc.
