Very interesting diagram here of how to get a 4H-SiC/Diamond substrate and then apply GaN epitaxy & device fabrication on top. Notice how much better the power dissipation is with SiC/Diamond composite substrate vs SiC substrate.
This is great stuff for GaN HEMT devices.
This is conducted by CAS IME & 南京电子器件研究所/CETC 55th Institute
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