The Xinde Semiconductor engineering team successfully completed the full-process technical verification of FOCT-L (FANOUT Connected Tech-Local Silicon Interconnect), a buried bridge fan-out high-performance chip interconnect packaging process. This marks a milestone breakthrough in the field of 2.5D/3D advanced packaging, and Xinde Semiconductor has achieved world-leading localized silicon interposer interconnect integration capabilities, officially joining the first echelon of global advanced packaging technology, and can provide core packaging support for the next generation of high-performance computing chips.
2.5D packaging core technology breakthrough FOCT-L
With the explosive growth in computing power demand, Moore's Law is gradually slowing, and advanced packaging technology is becoming a key path to continued chip performance improvement. FOCT-L packaging, the crown jewel of 2.5D/3D advanced integration technologies, boasts high density, high bandwidth, and low power consumption. It is the cornerstone supporting AI training chips, high-end GPUs, HPC processors, and large-capacity storage chips. The Xinde Semiconductor R&D team faced challenges such as local silicon bridge interconnects, high-precision bonding, ultra-thin chip stacking, and signal integrity control, successfully overcoming core technical barriers.
The R&D team has achieved high-density direct interconnection in local areas within multi-chip modules, abandoning the traditional interposer global wiring mode. By using micron-level silicon bridges (Si-Bridges) to build micron-level interconnect channels in key areas at the edge of the chip, the interconnection density is increased by more than 5 times compared to traditional packaging, and the signal transmission distance is shortened to the millimeter level. The local silicon bridge (LSI) array replaces the monolithic silicon interposer to achieve a "break the whole into parts" modular design: a single interposer integrates 2*LSI chips, supports an ultra-large packaging area of 2500mm², and the through-molded via (TMV) insertion loss is less than 0.3dB/mm, solving the problem of lithography splicing errors and removing packaging barriers for domestically produced ultra-high computing power chips.
Technological advantages
Advantage 1: Compared with the full-size silicon interposer, the silicon material area used in the local silicon bridge is reduced by more than 70%, greatly reducing the expensive silicon material cost and interposer manufacturing/processing costs, making this cutting-edge technology more economical and market competitive.

Advantage 2: This structure allows for the flexible placement of multiple local silicon bridge interconnects on the same interposer, supporting heterogeneous integration of multiple chips. Designers can freely combine chips with different process technologies and functions (such as CPU, GPU, HBM, I/O, SoC, etc.) like building blocks to achieve optimal system performance.
Advantage 3: Achieve 800nm/800nm ultra-fine line width/spacing for silicon bridge interconnection, 36μm chip bonding uBump bonding pitch, and ±1μm interlayer alignment accuracy, meeting the interconnection requirements of high-performance GPUs and reducing signal latency by 80%.
Advantage 4: The R&D team relies on a multi-physics field high-precision thermal-mechanical collaborative simulation platform to optimize the design: accurately predicting the stress distribution of the product throughout its life cycle, guiding the multi-dimensional collaborative design of silicon bridge shape, bottom filler formulation, etc., reducing the stress at key interconnection points by more than 40%; and also developing exclusive materials and matching thicknesses for the silicon bridge structure to ensure the long-term reliability of the product in harsh environments.
The successful production of the 2.5D FOCT-L sample is a strong testament to Xinde Semiconductor's technological R&D capabilities, and an important step for China's high-end semiconductor packaging industry to move towards a new stage of independent control.