Chinese semiconductor thread II

[Wahid145]

Digitimes is reporting that YMTC has entered LPDDR5 sampling stage. They also claim half of the new Phase 3 fab will be allocated for DRAM.

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This is something I was hoping these two Chinese companies would eventually do. All top 3 Memory Makers make both DRAM and NAND simultaneously. So now YMTC is having both in the near future.

CXMT should start RnD into NAND Flash now and start thinking to mass produce in 2-3 years time. As far as I remember, NAND Flash is easier to get into then DRAM and CXMT already mastered DRAM!
@tokenanalyst you saw any patents or news that CXMT is getting into NAND? We kept hearing rumors (even patents perhaps) about YMTC getting into DRAM for at least 1-1.5 years now

 

[dropout003]

Promo video of SiCarrier from when it debuted. (Delete if it's a post)

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[tphuang]

Japanese news outlet AsiaNikkei too reporting the same information.

Massive expansion in memory production from both CXMT and YMTC.

1. CXMT is the world’s fourth-largest DRAM maker following Samsung Electronics, SK Hynix, and Micron (with a market share of approximately 11.1% based on production capacity), which could expand to about 13.9% by 2027.

2. YMTC’s NAND market share could expand from about 12% in 2025 to 15% by 2028.

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Looking at their charts. I think they are severely underestimating YMTC's willingness to add capex going forward and capacity. Even CXMT, their expansion is probably going to far outstrip the current estimates.

This is something I was hoping these two Chinese companies would eventually do. All top 3 Memory Makers make both DRAM and NAND simultaneously. So now YMTC is having both in the near future.

CXMT should start RnD into NAND Flash now and start thinking to mass produce in 2-3 years time. As far as I remember, NAND Flash is easier to get into then DRAM and CXMT already mastered DRAM!
@tokenanalyst you saw any patents or news that CXMT is getting into NAND? We kept hearing rumors (even patents perhaps) about YMTC getting into DRAM for at least 1-1.5 years now

There is a reason Micron got out of the consumer market and SK/Samsung are all cutting back or holding steady on NAND production. Demand is exploding in business, HBM and server DRAM market. That's where the money is being made.

CXMT has to dramatically increase DRAM production just to capture more of that HBM share. I wouldn't worry about it getting into NAND right now. NAND is just easier to develop.

 

[tokenanalyst]

This is something I was hoping these two Chinese companies would eventually do. All top 3 Memory Makers make both DRAM and NAND simultaneously. So now YMTC is having both in the near future.

CXMT should start RnD into NAND Flash now and start thinking to mass produce in 2-3 years time. As far as I remember, NAND Flash is easier to get into then DRAM and CXMT already mastered DRAM!
@tokenanalyst you saw any patents or news that CXMT is getting into NAND? We kept hearing rumors (even patents perhaps) about YMTC getting into DRAM for at least 1-1.5 years now

I have never seem one. mostly RAM patents.

 

[tokenanalyst]

Targeting the semiconductor and new materials fields, Beijing releases an action plan for innovation and development in atomic-level manufacturing.​

Beijing has unveiled the Beijing Atomic-Level Manufacturing Innovation and Development Action Plan (2026–2028), a strategic initiative aimed at advancing precision manufacturing at the atomic scale particularly in semiconductors and advanced materials. The plan targets critical technological bottlenecks by setting clear goals: developing five types of core software tools, creating at least ten innovative equipment systems, and establishing ten practical applications and solutions by 2028. These efforts are designed to lay the foundation for Beijing to become a leading domestic hub in atomic-level manufacturing innovation and real-world application.

The action plan is structured around six key areas. First, it focuses on building essential software capabilities, including dynamic simulation, process design, phase transition control, surface inspection, and a unified database that supports cross-scale predictions of material behavior and device performance. These tools will improve accuracy in modeling, optimize manufacturing processes, and enhance quality monitoring through AI-driven analytics.

In equipment development, Beijing prioritizes breakthroughs in key technologies such as angstrom-level silicon wafer polishing, atomic-precision etching, ultra-thin wafer thinning for advanced packaging, and the production of two-dimensional metal materials at the nanoscale. It also addresses challenges in vacuum systems and specialized material preparation, including ultra-lubricating components for aerospace bearings and high-performance carbon films.

The plan further targets construction equipment critical to manufacturing, such as atomic-level thin-film deposition, single-crystal copper target fabrication, epitaxial growth of 2D semiconductors like molybdenum disulfide, and precision ion implantation. These systems are essential for producing next-generation semiconductor components and flexible electronic materials.

For quality assurance, the initiative emphasizes high-precision measurement tools including sub-angstrom laser interferometers and micro/nano sensors capable of detecting minute structural or environmental changes. This ensures reliable performance in advanced chip fabrication and failure analysis.

Focus Areas:​

1. Software Development:​
   • Dynamic simulation, process design, phase transition control, surface inspection software​
   • A foundational database for atomic-scale structural stability and material properties​
2. Machining Equipment:​
   • Angstrom-level polishing/etching of silicon wafers​
   • Micron-level thinning for advanced packaging​
   • Ultra-high-speed bearing materials and 2D metal fabrication​
   • Ultra-high vacuum environment control​
3. Construction Equipment:​
   • Thin film deposition (atomic thickness)​
   • Single-crystal copper target production​
   • Epitaxial growth of 2D semiconductor layers​
   • Ion implantation with high precision​
   • Nano-patterned structure fabrication for flexible electronics​
   • Silicon-based carbon atom deposition​
4. Testing & Measurement Equipment:​
   • Sub-angstrom laser interferometry for ultra-precision positioning​
   • Advanced micro/nano measurement tools (magnetic, thermal, atomic force)​
   • High-sensitivity pollutant sensors for ppb-level detection​
5. Application Development:​
   • Pilot implementations in semiconductor processing and new material synthesis (e.g., 2D materials, flexible electronics, specialized powders)​
   • Integrated verification of processes in real-world scenarios​
6. Support Measures:​
   • Foster a tiered ecosystem for SMEs and high-growth startups (gazelle, unicorn, "little giant" enterprises)​
   • Secure funding from national and municipal sources​
   • Support early-stage R&D through innovation roadshows​
   • Build talent pools and industry incubation platforms​
   • Promote standardization, pilot manufacturing platforms, and collaboration via the atomic-level manufacturing alliance​

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[tokenanalyst]

Ningbo Silicon Electronics is accelerating its globalization efforts and is poised for a new era in advanced packaging.​

In 2025, Ningbo Silicon Electronics achieved robust financial growth, with projected revenue rising to RMB 4.2–4.6 billion (a 16.37%–27.45% increase) and net profit reaching RMB 75–100 million (a 13.08%–50.77% rise), driven by strong performance in advanced packaging and testing. The company successfully navigated industry recovery, benefiting from a rebound in AI demand and the end of inventory cycles, while optimizing its industrial layout to align with evolving market needs.

Based on its proprietary 2.5D/3D Chiplet technology, it launched the FH-BSAP (Forehope-Brick-Style Advanced Package) modular advanced packaging technology platform. Simultaneously, relying on the FH-BSAP technology platform, it has innovatively developed a series of cutting-edge advanced packaging technology achievements:

1. The HD-FO (High Density Fan-Out Package) RWLP series (Wafer-Level Reconfigurable Package) offers flexible solutions in RWLP-D (face-down) and RWLP-U (face-up);

2. The HCoS series (heterogeneous interconnect package on substrate) applied to 2.5D wafer-level heterogeneous integration includes HCoS-OR (organic + RDL interposer), HCoS-SI (silicon interposer) and HCoS-OT (organic layer + TIV + Si Bridge composite interposer), covering a full range of 2.5D heterogeneous integration structures and technologies.

3. The V-series (vertical chip stack packaging) applied to 3D wafer-level integration technology focuses on VMCS (vertical multi-chip stack) and VSHDC (vertical ultra-high density interconnect) technologies.

The company has significantly boosted R&D investment, reaching RMB 142 million in the first half of 2025 (a 51.28% year-on-year increase), with over 160 new patents more than 100 related to advanced packaging solidifying its technological edge. It has also completed key production milestones, including full operation of its 2.5D packaging line and a strong capacity foundation through two major industrial bases (Phase I and Phase II).

Looking ahead to 2026, Ningbo Silicon Electronics will deepen its global expansion via an "overseas establishment + local service" model, targeting leading design firms in Taiwan, Europe, and the U.S. With plans for a RMB 900 million investment in next-generation heterogeneous packaging technology, the company aims to enhance capacity alignment with AI and automotive electronics markets solidifying its position as a global leader in advanced semiconductor packaging.

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[tokenanalyst]

Equipment installation is underway; Yangtze Memory Technologies' Phase III project is scheduled to begin production this year.​

According to the Yangtze Daily, the third phase of the Yangtze Memory Technologies Co., Ltd. (YMTC) project, the third project in Wuhan's integrated circuit industry with an investment of over 100 billion yuan, is scheduled to go into production this year.
The report states that the Yangtze Memory Technologies (YMTC) Phase III project is currently installing giant cleanroom equipment. According to the project manager, the project is scheduled to be completed and put into operation this year, attracting 200 upstream and downstream companies to the area.

According to public information, Yangtze Memory Technologies Co., Ltd. (YMTC) was established in July 2016 and is a leading enterprise in my country's memory chip manufacturing industry. It mainly provides global partners with 3D NAND flash memory wafers and chips, embedded memory chips, and consumer-grade and enterprise-grade solid-state drives and other products and solutions, which are widely used in mobile communications, consumer digital products, computers, servers and data centers.

In September 2025, Yangtze Memory Technologies Co., Ltd. (YMTC) officially launched its Phase III development plan and registered and established YMTC Phase III (Wuhan) Integrated Circuit Co., Ltd. The company has a registered capital of RMB 20.72 billion, marking another significant step forward for YMTC in the semiconductor industry following the establishment of YMTC Phase II in 2021.

In November 2025, the Hubei Daily reported that Yangtze Memory Technologies Co., Ltd. (YMTC) was operating steadily and was accelerating the construction of its Phase III project. Wang Zhonglin, Secretary of the Hubei Provincial Party Committee and Chairman of the Standing Committee of the Hubei Provincial People's Congress, also emphasized during his inspection of YMTC that it should strive to reach the pinnacle of global semiconductor storage technology, endeavor to build a world-class integrated storage and computing industrial base, and contribute more to serving the nation's high-level technological self-reliance and leading the development of new quality productive forces.

Wang Zhonglin stated that Yangtze Memory Technologies Co., Ltd. (YMTC) should accelerate the development of the new in-memory computing track, scientifically formulate development plans, rationally optimize spatial layout, and strive to build a world-class in-memory computing industrial base. At the same time, it should adhere to the principle of being at the forefront of the times, focus on key scientific and technological breakthroughs, and make every effort to promote the research and design of next-generation flash memory chips, so as to promote the deep integration of scientific and technological innovation and industrial innovation and cultivate and strengthen new productive forces.

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