Chinese semiconductor thread II

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Interference-governed electromagnetic-thermal coupling and heat transport in pulse EUV-irradiated multilayer nanofilms​

Mo-Si multilayer mirrors are central to extreme ultraviolet lithography, where nanoscale optical interference and heat accumulation together constrain reflectivity and operational stability. Here we develop an analytical electromagnetic-thermal coupling model that directly links transfer-matrix-based interference-controlled energy deposition with transient heat conduction in EUV-irradiated multilayers. The model reveals a fundamental trade-off whereby increasing the multilayer period number enhances reflectivity but simultaneously elevates temperature by impeding heat dissipation. Interference-driven volumetric absorption further gives rise to pronounced axial temperature gradients and a post-pulse downward migration of the heat-flux maximum, a delayed-heating effect inaccessible to conventional surface-flux-based models. Systematic analysis establishes scaling laws connecting interfacial thermal resistance, beam size, and incident energy density to thermal confinement and temperature rise. By incorporating interfacial compaction kinetics, the model enables a quantitative assessment of mirror lifetime. This work offers a theoretical tool for thermal-optical co-design of multilayer nanostructures including EUV mirrors under pulsed irradiation across a wide spectral range.

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Yongjiang Laboratory Breaks Through in Ultra-Thin Large Silicon Carbide Wafer Fabrication​

In a major advancement for China’s third-generation semiconductor industry, the Heterogeneous Integration Research Center at Yongjiang Laboratory has successfully developed a novel process to fabricate 6–8 inch, ultra-thin silicon carbide (SiC) wafers as thin as 20–30 micrometers, with exceptional thickness uniformity (TTV < 2 µm) reaching industry-leading standards.

Addressing key industry challenges SiC’s extreme hardness, warping/breakage risks, and thickness control difficulties the team invented a room-temperature, ultra-flat temporary bonding + precision thinning technology, integrated with laser lift-off, replacing traditional high-temperature mechanical grinding. This innovation eliminates thermal stress, dramatically improving yield and precision.

The breakthrough enables stable production of high-quality, structurally intact ultra-thin SiC wafers, critical for next-gen applications requiring higher power density, superior heat dissipation, and enhanced high-frequency performance such as high-power semiconductor chips and military phased array radars.

Leveraging its core technology platform, the team rapidly transitioned from R&D to industrial-scale production, significantly shortening the path to market. Next steps include:​

• Scaling up stable mass production of 6–8 inch wafers​
• Conducting long-term reliability testing​
• Optimizing integration with downstream device manufacturing​
• Initiating pre-research on 12-inch ultra-thin SiC wafer processing​
• Building a robust raw material supply chain and full-process quality control system​

This milestone marks a critical step toward China’s independent control of high-end SiC substrate technology, accelerating the domestic semiconductor industry’s upgrade and global competitiveness.

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Chenxian Optoelectronics' capacity expansion has attracted attention; a list of its recent winning bids for glass-based Micro LED production line equipment is provided.​

Chenxian Optoelectronics (Chengdu Chenguangdian Co., Ltd.) is expanding its glass-based Micro LED production line in Chengdu High-tech Zone with a 3 billion yuan investment. The project, approved by local authorities, will add 22,000 m² of annual screen production capacity (totaling 40,000 m² after completion) by purchasing over 130 equipment sets.

Key equipment suppliers include:​

• Suzhou Jiazhicai: Screen aging systems​
• Hefei Xinyihua: Automated handling, repair machines, and loading/unloading systems​
• Suzhou Protech: Automated handling systems​
• Jiangsu Fulat: Grinder and chemical gold plating equipment​
• Shenzhen Han's: Selective laser transfer systems​

Established in 2020 with a 1.2 billion yuan total investment, the company is backed by Chengdu High-tech Investment Group, Visionox (15.43% stake), and others. It aims to become a leading Chinese Micro LED technology developer. Recent bids (2025–2026) highlight strong domestic equipment supplier participation.
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High-power spectral and polarization modulation coatings for long-wave infrared laser systems​

New-generation semiconductor manufacturing technologies, such as extreme ultraviolet lithography and laser spike annealing, have created an urgent demand for high-power CO₂ laser systems. The 10.6 μm infrared polarization coatings, as a core optical component in these systems, plays a critical role in beam shaping, polarization control, and high-efficiency transmission. However, existing infrared polarization coatings still face numerous challenges in terms of spectral efficiency, polarization characteristics, and laser-induced damage resistance. These challenges severely limit the widespread application of infrared polarization coatings in key integrated circuit equipment. Therefore, this paper systematically investigates the material properties, design methods, fabrication processes, and performance characterization of long-wave infrared polarization coatings, aiming to break through existing technical bottlenecks and enhance the comprehensive performance of infrared polarization coatings to meet the application requirements of high-power CO₂ laser systems in the field of key integrated circuit equipment.​

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SMIC establishes Advanced Packaging Research Institute​

SMIC's Advanced Packaging Research Institute was officially inaugurated at its Shanghai headquarters. Chen Jie, Standing Committee Member of the Shanghai Municipal Committee and Vice Mayor of Shanghai, and Liu Xunfeng, Chairman of SMIC, jointly completed the ceremony. Officials from the Ministry of Industry and Information Technology and the Shanghai Municipal Government, as well as expert teams from Tsinghua University and Fudan University, were all present. This high-profile event marks a crucial step in the shift from fragmented R&D to collaborative problem-solving in China's advanced packaging field, and is also a core move by SMIC to complete its industrial ecosystem and overcome technological bottlenecks. In his speech, Liu Xunfeng clarified that the institute will focus on cutting-edge advanced packaging technologies and common industry challenges, collaborating with top universities and industry chain partners to build an integrated platform of government, industry, academia, research, and application, creating a leading domestic and internationally advanced R&D and collaborative innovation alliance to precisely address core shortcomings in the industry.



Advanced packaging equipment is similar to front-end wafer manufacturing equipment, and suppliers benefit from the growth of the advanced packaging and testing industry. With the development of advanced packaging, new connection methods such as bumping, flipping, TSV, and RDL (rewiring) require increasingly sophisticated equipment. Taking long ball bumps as an example, the main process flow includes pre-cleaning, UBM, deposition, photolithography, solder plating, resist removal, etching, cleaning, and inspection. Therefore, the required equipment includes cleaning machines, PVD equipment, photolithography machines, etching machines, electroplating equipment, and cleaning machines. Materials required include photoresist, developer, etching solution, and cleaning solution. To promote industry development and facilitate resource sharing, we welcome upstream and downstream players in the chip design, wafer manufacturing, equipment, and materials industries to join the Aibang Semiconductor Advanced Packaging Industry Chain Exchange Group.​

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