Agree but its probably more for domestic signalling that Beijing wants their tech companies to buy domestic semis.
Chinese semiconductor thread II
- Thread starter vincent
- Start date
Indeed this can be a light protectionism measure to help new Chinese startups. Not that it is without merit..just that the current H20 are the same ones of last year, but last year apparently there was no problem with tracking.
Of course you can also believe that they realized only now that H20 has backdoors, but IMO more realistically last year there was no alternative: TSMC was banned for Chinese AI chips and SMIC advanced node was 100% dedicated to HW.
I read this as indirect hint that SMIC capacity is ramping up at advanced nodes and Chinese AI startup are maturing software, indeed CUDA replacement is a big challenge. Still not clear to me why Chinese firms do not consolidate around a single, open sourced, local CUDA alternative: it is a gigantic challenge even for Huawei to replace CUDA. I don't see how small players can do.
48 Institute is deeply engaged in the field of compound semiconductors and continues to expand the application of epitaxial equipment
The 48th Institute's proprietary MOCVD equipment is a key component specifically designed for epitaxial growth of III-V compound semiconductor materials. Based on an arsenic/phosphorus material system, it efficiently produces materials such as gallium arsenide and indium phosphide. Suitable for applications in optoelectronic lasers, radio frequency devices, and space solar cells, it provides a core material preparation platform for emerging technologies such as 5G communications, artificial intelligence, and autonomous driving. Integrating advanced technologies such as online monitoring and fully automated transmission, the equipment achieves industry-leading performance in key metrics such as material uniformity, interface steepness, and doping accuracy.
As a leading company in the field of compound semiconductor epitaxial equipment in China, the 48th Institute has successfully launched a series of equipment including SiC epitaxial furnaces, MBE equipment, and MOCVD. In 2022, it won the largest order for 6-inch SiC epitaxial furnace equipment from a leading domestic company, achieving a major breakthrough in domestic high-end epitaxial equipment.
The latest breakthrough in MOCVD equipment will further broaden 48's business scope in the semiconductor field and better assist in the construction of national semiconductor equipment industry clusters.
Semiconductor packaging material manufacturer Zhizhiboyou completed tens of millions of yuan in Pre-A round of financing
Zhizhibo, a domestic semiconductor packaging materials company, recently completed tens of millions of yuan in Pre-A funding, led by Xiangfeng Changqing, Dingxing Quantum, Guoqi Investment, Chengdu Better, and Haihe Qingwei. The funds will be used to build production bases in South China, the Yangtze River Delta, and Sichuan, expand its R&D team, and acquire semiconductor packaging and testing equipment.
Public information shows that Zhizhi Boyue was established in Shaanxi in 2022, focusing on the domestic substitution of high-end electronic materials in the fields of display panels, semiconductor packaging and military industry. Its technological accumulation began with the research and development of special materials for military industry, and later turned to the fields of display and semiconductor packaging. The company takes the independent modification of the underlying resin as its core technical route, and is one of the very few companies in China that has achieved a full chain of high-end packaging materials. Its team started from the molecular structure design of epoxy resin and acrylic resin, breaking through the three major technical barriers of electronic-grade impurity ion control (PPB grade), uniform dispersion of fillers and long-term reliability. Zhizhi Boyue will achieve mass production of products in early 2025, and different products will be used for LCD panel packaging, helicopter carbon fiber parts protection and semiconductor wafer thinning and cutting.
In the first half of the year, the added value of the electronic information manufacturing industry increased by 11.1% year-on-year, and the total profit increased by 3.5% year-on-year.
On July 31, the Operation Monitoring and Coordination Bureau of the Ministry of Industry and Information Technology announced the operation status of the electronic information manufacturing industry in the first half of 2025. The data showed that in the first half of the year, the added value of electronic information manufacturing industries above designated size increased by 11.1% year-on-year.
In terms of production, in the first half of the year, the added value of electronic information manufacturing industries above designated size increased by 11.1% year-on-year, 4.7 and 1.6 percentage points higher than the industrial and high-tech manufacturing industries during the same period, respectively. In June, the added value of electronic information manufacturing industries above designated size increased by 11% year-on-year. Among major products, mobile phone production reached 707 million units, a year-on-year decrease of 4.5%, of which smartphone production reached 563 million units, a year-on-year increase of 0.5%; microcomputer production reached 166 million units, a year-on-year increase of 5.6%; and integrated circuit production reached 239.5 billion units, a year-on-year increase of 8.7%.
Peking University published two important technological advances in wide-bandgap semiconductor power devices at the IEEE ISPSD
The IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), a leading conference in the field of power semiconductor devices, was recently held in Kumamoto, Japan. Two high-quality papers from Peking University's School of Integrated Circuits were selected for presentation, showcasing Peking University's latest research achievements to international peers in the power device and power integrated circuit fields. These papers covered GaN CMOS integration technology and SiC MOSFET reliability physics. The paper details are as follows:
1 High-performance GaN CMOS integration technology
GaN CMOS logic circuits are a key technology for improving the high-frequency characteristics of GaN power chips. However, the low current density of GaN p-channel field-effect transistors (p-FETs) currently limits the development of this technology. To address this issue, most current research focuses on optimizing the device channel region. However, the low current density problem of p-FETs remains unresolved.
Wei Jin's research team at Peking University has discovered that source resistance has a significant impact on current density. First, through TCAD simulation, the research team discovered that source resistance reduces the effective gate voltage at the device channel, thereby reducing the device current density and increasing the device's channel resistance. To optimize the device's source resistance and thus improve electrical performance, the team inserted a layer of Al0.7Ga0.3N into the device access region, effectively reducing the device's source resistance through an ionization enhancement scheme. Device test results verified that source resistance engineering can effectively improve GaN p-FET current density, and the test data is at the internationally advanced level.
2 A new mechanism of negative shift in SiC MOSFET threshold voltage
Currently, SiC power devices have achieved significant commercial success. However, due to the high interface traps caused by the current oxidation process and the small bandgap difference at the SiC/SiO₂ interface, threshold voltage Vth instability has become a prominent problem for SiC MOSFETs. In practical application scenarios such as synchronous rectification, freewheeling diodes are essential components. On the one hand, compared with anti-parallel Schottky barrier diodes (SBDs), the body diode built into SiC MOSFETs has a significant advantage due to its higher cost-effectiveness. On the other hand, in order to suppress the false turn-on phenomenon of SiC MOSFETs, a negative gate voltage is often used to turn off the device. Through in-depth research, the team of Researcher Wei Jin from Peking University discovered for the first time that applying a negative gate voltage to turn off the device when the body diode is in the on state will cause a significant negative shift in the threshold voltage.
Changwei Technology's semiconductor packaging and testing headquarters project was successfully delisted
Guangdong Changwei Semiconductor Co., Ltd. (hereinafter referred to as "Changwei Semiconductor") successfully won 20 acres of industrial land in Jieyuan Village, Minzhong Street, Torch High-tech Zone, Zhongshan, marking that Changwei Technology's semiconductor packaging and testing headquarters project has officially taken root in the "Bay Area Optics Valley".
The successful implementation of this project is not only a major breakthrough for Torch High-tech Zone in attracting key links in the high-end semiconductor industry chain, but also a vivid practice of accelerating the "Bay Area Optics Valley" strategy and empowering the district's investment promotion team with precise services. It injects "core" kinetic energy into Torch High-tech Zone's efforts to build a semiconductor and optoelectronic industry cluster with global influence.
As an innovative force in the domestic semiconductor packaging and testing sector, Changwei Semiconductor specializes in the production of domestically produced alternative semiconductor devices, including diodes, transistors, Schottky diodes, MOSFETs, IGBTs, silicon carbide, and gallium nitride devices. With this expansion into the Torch High-tech Zone, Changwei plans to invest in the construction of a comprehensive headquarters base integrating advanced packaging and testing, a technology R&D center, and headquarters sales.
This project targets the mid-to-high-end semiconductor packaging and testing market. Leveraging the Torch High-tech Zone's deep industrial expertise in integrated circuits, optoelectronic displays, and the innovative ecosystem of the "Bay Area Optics Valley," it will significantly strengthen the core links of the region's semiconductor industry chain. Upon completion, the project is expected to generate an annual output value of 480 million yuan, attracting upstream and downstream supporting enterprises and high-end technical talent, becoming a powerful engine driving the semiconductor industry's growth in the Torch High-tech Zone and the entire city.
The successful implementation of this project is not only a major breakthrough for Torch High-tech Zone in attracting key links in the high-end semiconductor industry chain, but also a vivid practice of accelerating the "Bay Area Optics Valley" strategy and empowering the district's investment promotion team with precise services. It injects "core" kinetic energy into Torch High-tech Zone's efforts to build a semiconductor and optoelectronic industry cluster with global influence.
As an innovative force in the domestic semiconductor packaging and testing sector, Changwei Semiconductor specializes in the production of domestically produced alternative semiconductor devices, including diodes, transistors, Schottky diodes, MOSFETs, IGBTs, silicon carbide, and gallium nitride devices. With this expansion into the Torch High-tech Zone, Changwei plans to invest in the construction of a comprehensive headquarters base integrating advanced packaging and testing, a technology R&D center, and headquarters sales.
This project targets the mid-to-high-end semiconductor packaging and testing market. Leveraging the Torch High-tech Zone's deep industrial expertise in integrated circuits, optoelectronic displays, and the innovative ecosystem of the "Bay Area Optics Valley," it will significantly strengthen the core links of the region's semiconductor industry chain. Upon completion, the project is expected to generate an annual output value of 480 million yuan, attracting upstream and downstream supporting enterprises and high-end technical talent, becoming a powerful engine driving the semiconductor industry's growth in the Torch High-tech Zone and the entire city.