Chinese semiconductor thread II

GulfLander

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Google translated
The "glass hard disk" created by the Wuhan National Optoelectronics Research Center of Huazhong University of Science and Technology will be put into industrialization at the end of this year.
Capacity up to 360TB, permanently saved! 2mm thick "glass hard disk produced at the end of year
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tokenanalyst

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ACM Shanghai announces major upgrade to its Ultra C wb wet cleaning tool for advanced chip manufacturing​

ACM Semiconductor Equipment (Shanghai) Co., Ltd. (hereinafter referred to as "ACM Shanghai"), a leading supplier of wafer process solutions for semiconductor front-end and advanced wafer-level packaging applications, today announced a major upgrade to its Ultra C wb wet cleaning tool. This new upgrade is designed to meet the demanding technical requirements of advanced node manufacturing processes.

The upgraded Ultra C wb uses patent-pending nitrogen (N2) bubbling technology to effectively solve the problems of poor wet etching uniformity and secondary deposition of byproducts. In advanced node manufacturing processes, these problems are common in traditional phosphoric acid wet cleaning processes for high aspect ratio trenches and through-hole structures. Nitrogen bubbling technology not only improves the phosphoric acid transmission efficiency, but also improves the uniformity of temperature, concentration and flow rate in the wet etching tank. The improvement in mass transfer efficiency during wet etching prevents byproducts from accumulating in the wafer microstructure, thereby avoiding secondary deposition.

This technology has great application prospects in 3D NAND, 3D DRAM, and 3D logic devices with more than 500 layers.


The upgraded Ultra C wb device has the following new features and benefits:
▲ Improved etching uniformity: Compared with traditional tank-type wet cleaning equipment, the Ultra C wb platform is equipped with nitrogen bubbling technology, which improves the wet etching uniformity within and between wafers by more than 50%.
▲ Improved particle removal performance: In advanced node processes, the Ultra C wb platform’s superior cleaning capabilities have been shown to effectively remove organic residues from special phosphoric acid additives.
▲ Expanded process capabilities: The upgraded cleaning station module has passed three advanced node process verifications, including: stacked silicon nitride etching, channel hole polysilicon etching, and gate line tungsten etching, and can be used with a variety of chemical solutions, such as phosphoric acid, H4 etching solution (a mixed acid solution commonly used for metal film etching), tetramethylammonium hydroxide (TMAH), standard cleaning solution 1 (SC1) and silicon germanium (SiGe) etching solution. In addition, more processes and application solutions are being developed in customer factories.
▲ Independent intellectual property design: The patent-pending nitrogen bubbling design can generate uniformly distributed large-sized bubbles with precisely controllable bubble density. The patent-pending nitrogen bubbling core technology can be applied to the Ultra C Tahoe (single-chip tank combination cleaning equipment) platform of Shengmei Shanghai to better meet customers' future process needs.

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tokenanalyst

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Jingmei Semiconductor's high-end photomask project settled in Hefei​


Recently, the Jingmei Semiconductor High-end Photomask Project with a planned total investment of 12 billion yuan was officially settled in Hefei High-tech Zone. The project is mainly engaged in the research and development, production and sales of 28nm and above semiconductor masks. The first phase investment is 6.5 billion yuan, and the monthly production capacity is about 3,200 pieces after full production. After the completion of the project, it can effectively alleviate the situation of long-term dependence on imports of domestic high-end masks, reduce the risk of "stuck neck", and provide solid guarantee for improving the level of localization of the industrial chain and strengthening independent controllable capabilities.
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The photomask is a key component in the semiconductor manufacturing process, and its quality directly affects the yield and performance of the chip. This project will not only realize the "high-tech manufacturing" of high-end photomasks, but is also a key step for the semiconductor industry in the high-tech zone to strengthen the chain extension and chain supplement strategy. Since the beginning of this year, the high-tech zone has continued to make efforts in "consolidating the industrial foundation, improving the industrial chain, and expanding the scale of the industry" to promote the rapid and stable development of the integrated circuit industry. At present, it has gathered 204 key industrial chain enterprises in Hefei, accounting for about 63% of the city. In the next step, the high-tech zone will continue to accelerate industrial agglomeration, expand the scale of the industry, and at the same time fully promote industrial innovation and upgrading, so as to lay a solid foundation for the development and accumulate innovation momentum for Hefei to build a semiconductor industry cluster with significant regional influence.

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tokenanalyst

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Photoresist company Hengkun New Materials has made new progress in its IPO on the Science and Technology Innovation Board​


Recently, the official website of the Shanghai Stock Exchange showed that the Shanghai Stock Exchange Listing Review Committee is scheduled to hold the 26th Listing Review Committee review meeting in 2025 on July 25 to review the initial public offering of Hengkun New Materials.

It is understood that Hengkun New Materials is committed to the research and development and industrial application of key materials in the field of integrated circuits. It is one of the few innovative companies in the country that has the ability to develop and mass produce key materials for 12-inch integrated circuit wafer manufacturing. It is mainly engaged in the research and development, production and sales of products such as photolithography materials and precursor materials.

Hengkun New Materials' products are mainly used in the lithography, thin film deposition and other process links in the production of advanced NAND, DRAM memory chips and logic chips at 90nm technology nodes and below. They are indispensable key materials for integrated circuit wafer manufacturing.


The company plans to raise about 1.007 billion yuan for this IPO. After deducting the issuance costs, it will invest in the second phase of the integrated circuit precursor project and the advanced materials project for integrated circuits according to the priority of the project construction. The company's IPO sponsor is CITIC Construction Investment.
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tokenanalyst

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IC sub-nanometer metrology

Nanometrology is the core support for the traceability of value, error control and measurement accuracy of integrated circuit micro-nano detection equipment. The School of Physical Science and Engineering of Tongji University has established an innovative idea of nanometrology with "flattening of value transfer" as the core by revealing the physical laws of the materialization of natural constants and the transfer of value. After four years of research and development, the team successfully developed a "self-traceable grating interferometer" with extremely small nonlinear errors using atomic lithography gratings with picometer-level average spacing accuracy. The instrument can effectively overcome the dependence on harsh environmental control and air refractive index calibration, has a displacement measurement accuracy that is better than the sub-nanometer level, and has the core advantage of extremely high resistance to environmental interference. The research results have now been miniaturized and integrated, and are expected to provide on-site metrology and calibration solutions for integrated circuit measurement equipment.​

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GulfLander

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Alright, so Tsinghua university is now claiming to have found ideal material for EUV photoresist using something based on Polytelluoxane, PTeO material
I think tokenanalyst posted abt it recently..

Tsinghua University Chemistry team collaborates to develop ideal extreme ultraviolet (EUV) photoresist material​


A team from the Department of Chemistry at Tsinghua University has made important progress in extreme ultraviolet (EUV) lithography materials and developed a new photoresist based on polytelluoxane (PTeO), which provides a new design strategy for key materials in advanced semiconductor manufacturing.

As integrated circuit technology continues to advance to 7nm and below nodes, 13.5 nm wavelength EUV lithography has become the core technology for advanced chip manufacturing. However, the characteristics of EUV light sources such as large reflection loss and low brightness have posed higher challenges to photoresists in terms of absorption efficiency, reaction mechanism and defect control. Current mainstream EUV photoresists rely on chemical amplification mechanisms or metal sensitized clusters to improve sensitivity, but they often face problems such as complex structure, uneven component distribution, easy diffusion of reactions, and easy introduction of random defects. How to break through these bottlenecks and build an ideal photoresist system has become the core challenge in the current EUV lithography material field. It is generally believed in academia that an ideal EUV photoresist should have the following four key elements at the same time: 1) high EUV absorption capacity to reduce exposure dose and improve sensitivity; 2) high energy utilization efficiency to ensure that light energy is efficiently converted into changes in the solubility of photoresist materials in a small volume; 3) uniformity at the molecular scale to avoid defect noise caused by random distribution and diffusion of components; 4) as small a building unit as possible to eliminate the influence of primitive feature size on resolution and reduce line edge roughness (LER). For a long time, few material systems have been able to meet all four criteria simultaneously.

The research group has developed a new EUV photoresist based on the polytelluroxane invented by the team earlier, which meets the above conditions of the ideal photoresist. In this study, the team directly introduced the high EUV absorption element tellurium (Te) into the polymer skeleton through the Te─O bond. Tellurium has the highest EUV absorption cross-section except for the inert gas elements xenon (Xe), radon (Rn) and the radioactive element astatine (At). Its EUV absorption capacity is much higher than the short-period elements and metal elements such as Zn, Zr, Hf and Sn in traditional photoresists, which significantly improves the EUV absorption efficiency of photoresists. At the same time, the low dissociation energy of the Te─O bond allows it to directly break the main chain after absorbing EUV, inducing solubility changes, thereby achieving highly sensitive positive development. This photoresist is composed of only a single-component small molecule polymerization, and realizes the integration of ideal photoresist properties under a very simple design, providing a clear and feasible path for building the next generation of EUV photoresists.

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tonyget

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SEM analysis of Huawei Ascend 910C chip

It uses "TSMC 7nm class" node process,don't know what that mean

Also the video says that it didn't use advanced packaging,indicate that China still lag in advanced packaging technology

 
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