Chinese semiconductor thread II
- Thread starter vincent
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Well KLA, AMAT and LAM can say goodbye of what they have left of their business in China. Unless these executives manage to convince Trump.
I've been following this "Series of usa containing China's semiconductor industry". Almost every single step has backfired on then for past 6-7 years and they still don't learn. It's just unbelievable how incompetent the whole government is, both Democrats and Republicans.
I remember back in the days I used to be so worried whenever america put out a new restriction on China since it will stifle China's progress.
I noticed over the time, my attitude has changed. Recently I actually cheer any american restrictions/sanctions on China Semiconductor. Because it's highly likely it benefits China.
america is like your parents, forcing you (harshly) to do your homework so you get better grades (so funny)
Qualcomm restrictions when???
I wish, there was a way to completely restrict RISC-V so China has its own home grown ISA (from scratch and more usage of LoongArch)
I remember back in the days I used to be so worried whenever america put out a new restriction on China since it will stifle China's progress.
I noticed over the time, my attitude has changed. Recently I actually cheer any american restrictions/sanctions on China Semiconductor. Because it's highly likely it benefits China.
america is like your parents, forcing you (harshly) to do your homework so you get better grades (so funny)
Qualcomm restrictions when???
I wish, there was a way to completely restrict RISC-V so China has its own home grown ISA (from scratch and more usage of LoongArch)
Psychological warfare, the Chinese just ignored them and DO NOTHING and it infuriate the American even more ... lol
Fulide Semiconductor Parts Precision Cleaning Project Completed and Put into Operation
According to the official WeChat account of Qingdao Free Trade Zone, on May 13, the completion and commissioning ceremony of Qingdao Fulide Semiconductor Components Precision Cleaning Project was held in Qingdao Free Trade Zone.
It is understood that the project is invested and constructed by Anhui Fulide Technology Development Co., Ltd. with a total investment of about 100 million yuan, focusing on providing precision services such as surface cleaning and repair of semiconductor components for integrated circuit companies. After the project is put into production, it will serve Qingdao's local integrated circuit manufacturing, equipment and parts companies as the core, radiate to Shandong Province and surrounding areas, and further improve the regional industrial chain.
n-Type Metal-Oxide-Semiconductor Field-Effect Transistor Based on 100-Period Fully Strained SiGe/Si Nanostructures with Superlattice Epitaxy for Three-Dimensional Dynamic Random-Access Memory.
Abstract
Vertically stacked 3D dynamic random-access memory (DRAM) with horizontal cells has emerged as a promising solution for next-generation high-density memory. In order to meet the next node requirement, the stacked period of a specific SiGe/Si superlattice (SL) needs to exceed more than 64. However, achieving ultrahigh-period SiGe/Si SLs with uniform strain and low defects remains a critical challenge. Here, we demonstrate the epitaxial growth of fully strained 100-period Si/Si0.8Ge0.2 (43/8 nm) SLs with a total thickness of 5 μm. The SLs exhibit exceptional tier-to-tier uniformity (σthickness ∼ 0.33, σGe% ∼ 0.66), excellent crystallinity, sharp SiGe/Si interface (<3.3 nm), smooth surface (roughness <0.1 nm), and low threading dislocation density (<107/cm2). To efficiently evaluate the electrical performance of stacked SLs, we propose an approach using planar n-MOSFETs fabricated on the top Si layer. Remarkably, these devices show consistent electrical properties across 5–100 periods, confirming the uniformity of electrical performance of individual Si layers across the entire stack, even for 100-period SLs. This work provides a scalable pathway toward high-performance 3D DRAM with significantly enhanced storage density.
Lisuan Technology has completed the development of TrueGPU architecture and the first GPU product
On May 16, domestic GPU manufacturer Lisuan Technology announced through its official WeChat public account that after more than three years of unremitting efforts, Lisuan Technology has completed the design of the TrueGPU architecture and successfully developed the first generation of GPU products based on this architecture.
According to reports, Lisuan's self-developed TrueGPU architecture is the first-generation GPU fusion architecture designed to meet the needs of the new generation of high-performance graphics rendering and the new requirements for chips in the wave of popularization of AI applications. It is also the industry's first GPU architecture that integrates high-performance graphics rendering and high-performance artificial intelligence reasoning capabilities.
Lisuan Technology said that in the field of GPU chips, independent research and development of architecture is a very challenging task, but Lisuan Technology has successfully created the TrueGPU architecture with all its own intellectual property rights with amazing perseverance and innovative spirit. Behind this feat is a road of exploration full of difficulties and obstacles. The first GPU chip based on the TrueGPU architecture not only achieved a major breakthrough in technology, but also filled the gap in domestic high-end graphics rendering GPUs, providing strong support for promoting the inclusive application of large AI models.
Xinyaohui receives investment from the "national team", and China's semiconductor IP industry is breaking through.
Recently, China's leading semiconductor IP company, Xinyaohui Technology, announced that it has received strategic investment from Xinhua News Agency Investment Holdings, SDIC Juli and other "national team" institutions, marking that the technical strength of domestic semiconductor IP companies has been recognized by national capital. At present, with the rapid development of interface IP, chiplet technology, and RISC-V ecology, China's semiconductor IP industry is forming a regional technology highland with Shanghai, Chengdu and Beijing as the core, gradually breaking the long-term monopoly of international giants.