Nvidia orders suppliers to halt work on H20
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Chinese semiconductor thread II
- Thread starter vincent
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huge boon for the Chinese AI stocks based on this DeepSeek comment. Likely pointing to full support of MXFP8 by future Ascend chips (some call it Ascend-910D)
at this point, they may not even be able to sell out the H20s they still have in stock
Horizon Robotics hit 10 million chips delivered for Journey series. Big step forward
Changdian Technology's full-link packaging and testing safeguards the 800 V high-voltage (HVDC) power supply era.
As the density of high-performance computing continues to rise, data center power architectures are rapidly evolving toward 800 V DC (or ± 400 V ) HVDC systems. It's widely believed in the industry that 800 V architectures significantly reduce energy losses in power distribution networks, improve overall energy efficiency, and provide technical support for the large-scale deployment of megawatt-class cabinets.
Under this trend, Changdian Technology, relying on its years of deep cultivation and technological accumulation in the field of power semiconductor packaging and testing, has taken the lead in completing full-link packaging and testing solutions from discrete devices to highly integrated modules, providing comprehensive optimization for power performance, power distribution efficiency, heat dissipation capabilities, as well as system cost and size, to meet the growing power demand and better meet the development needs of the future high-performance computing field.
In the primary power supply unit ( PSU ) segment, JCET offers both advanced high-power discrete packages based on TO263-7L , TOLL , and TOLT , as well as industry-leading plastic-encapsulated power modules compatible with third-generation power devices using semiconductor materials such as gallium nitride ( GaN ) and silicon carbide ( SiC ). Both discrete devices and plastic-encapsulated modules are already in stable, large-scale mass production. For 800 V DC architectures, JCET has already completed its technical development and mass production verification.
The Intermediate Bus Converter ( IBC ) serves as a critical bridge between the 800 V supply and the downstream 12V/4.8V low-voltage outputs. Its high power density and extremely low PDN loss requirements pose significant challenges to packaging technology. JCET offers dual-sided heat dissipation PDFN packaging in this area, along with mature packaging and testing solutions for both GaN and silicon-based MOSFETs . The company has achieved multi-layer, high-density System-in-Package ( SiP ) and has already delivered these products in volume for leading server board projects.
Changdian Technology also holds a leading position in the point-of-load ( PoL ) power supply ( PSP) segment. The company offers mature QFN and new LGA highly integrated packaging solutions for products such as DrMOS and multi-phase controllers. Leveraging its proprietary multi-layer SiP process, Changdian Technology has achieved miniaturized power management modules with two to eight phases and multiple outputs, capable of handling currents exceeding 60 A per phase . The team has also completed the development of a new generation of highly integrated modules and achieved excellent results in SiP interconnect reliability testing.
Across the three major subsystems of PSU , IBC , and PoL , and facing the 800V voltage differential required for board-level applications, JCET has achieved a technological framework in packaging that prioritizes both discrete and integrated circuits, and monolithic and modular development. The company also maintains a pace of mass production that keeps pace with market demand. Furthermore, through in-depth collaboration with numerous material, equipment, and system integrators, JCET has established a robust collaborative network across the entire supply chain, providing customers with comprehensive value-added services including thermal simulation, reliability testing, and performance optimization.
Looking ahead, with the large-scale application of 800 V DC power supply solutions in global computing platforms, JCET will continue to leverage its leading advantages in packaging and testing, continuously optimizing high-voltage heat dissipation packaging, high-density SiP , and module-level reliability verification, creating innovative space for the next-generation data center power supply field to move towards a higher level of development.
Under this trend, Changdian Technology, relying on its years of deep cultivation and technological accumulation in the field of power semiconductor packaging and testing, has taken the lead in completing full-link packaging and testing solutions from discrete devices to highly integrated modules, providing comprehensive optimization for power performance, power distribution efficiency, heat dissipation capabilities, as well as system cost and size, to meet the growing power demand and better meet the development needs of the future high-performance computing field.
In the primary power supply unit ( PSU ) segment, JCET offers both advanced high-power discrete packages based on TO263-7L , TOLL , and TOLT , as well as industry-leading plastic-encapsulated power modules compatible with third-generation power devices using semiconductor materials such as gallium nitride ( GaN ) and silicon carbide ( SiC ). Both discrete devices and plastic-encapsulated modules are already in stable, large-scale mass production. For 800 V DC architectures, JCET has already completed its technical development and mass production verification.
The Intermediate Bus Converter ( IBC ) serves as a critical bridge between the 800 V supply and the downstream 12V/4.8V low-voltage outputs. Its high power density and extremely low PDN loss requirements pose significant challenges to packaging technology. JCET offers dual-sided heat dissipation PDFN packaging in this area, along with mature packaging and testing solutions for both GaN and silicon-based MOSFETs . The company has achieved multi-layer, high-density System-in-Package ( SiP ) and has already delivered these products in volume for leading server board projects.
Changdian Technology also holds a leading position in the point-of-load ( PoL ) power supply ( PSP) segment. The company offers mature QFN and new LGA highly integrated packaging solutions for products such as DrMOS and multi-phase controllers. Leveraging its proprietary multi-layer SiP process, Changdian Technology has achieved miniaturized power management modules with two to eight phases and multiple outputs, capable of handling currents exceeding 60 A per phase . The team has also completed the development of a new generation of highly integrated modules and achieved excellent results in SiP interconnect reliability testing.
Across the three major subsystems of PSU , IBC , and PoL , and facing the 800V voltage differential required for board-level applications, JCET has achieved a technological framework in packaging that prioritizes both discrete and integrated circuits, and monolithic and modular development. The company also maintains a pace of mass production that keeps pace with market demand. Furthermore, through in-depth collaboration with numerous material, equipment, and system integrators, JCET has established a robust collaborative network across the entire supply chain, providing customers with comprehensive value-added services including thermal simulation, reliability testing, and performance optimization.
Looking ahead, with the large-scale application of 800 V DC power supply solutions in global computing platforms, JCET will continue to leverage its leading advantages in packaging and testing, continuously optimizing high-voltage heat dissipation packaging, high-density SiP , and module-level reliability verification, creating innovative space for the next-generation data center power supply field to move towards a higher level of development.
Looks like Tsinghua University is starting to commercialize EUV photoresist research.
UnionPay’s newest member of the U872XAHE series of gallium nitride power chips – the U8727AHE
Shenzhen UnionPay Technology's U872XAHE series of gallium nitride power ICs has received updated specifications, including the new part number U8727AHE . These chips are available in an ESOP-7 package , have a 700V integrated MOS withstand voltage , and are rated for a maximum output power of 100W .
The U8727AHE gallium nitride power chip integrates high-voltage E-Mode GaN FETs . To ensure reliable operation and high system efficiency, the chip incorporates a high-precision, high-reliability driver circuit. The drive voltage is VDRV ( typically 6.4V) . EMI performance is a design challenge for high-frequency AC/DC converters. To address this, the U8727AHE integrates a drive current tiering function via the DEM pin. As shown in the figure, by configuring the DEM pin's voltage divider resistor value, different drive current levels can be selected, thereby adjusting the GaN FET 's turn-on speed, allowing system designers to achieve the optimal balance between EMI performance and system efficiency. Specific voltage divider resistor values are available in the data sheet.
The U8727AHE series of GaN power chips also integrates a light-load SR stress optimization function. When the drive current is configured in the first, second, or third gear, when the chip operates in light-load mode, the primary side turn-on speed is halved to reduce the SR Vds stress overshoot at no load.
Rapid Full-Field Surface Topography Measurement of Large-Scale Wafers Using Interferometric Imaging
College of Mechanical Engineering and Automation, Huaqiao UniversityFujian Key Laboratory of Green Intelligent Drive and Transmission for Mobile Machinery, Huaqiao University
School of Marine Engineering, Jimei University
Abstract
Rapid full-field surface topography measurement for large-scale wafers remains challenging due to limitations in speed, system complexity, and scalability. This work presents a interferometric system based on thin-film interference for high-precision wafer profiling. An optical flat serves as the reference surface, forming a parallel air-gap structure with the wafer under test. A large-aperture collimated beam is introduced via an off-axis parabolic mirror to generate high-contrast interference fringes across the entire field of view. Once the wafer is fully illuminated, topographic information is directly extracted from the fringe pattern. Comparative measurements with a commercial interferometer show relative deviations below 3% in bow and warp, confirming the system’s accuracy and stability. With its simple optical layout, low cost, and robust performance, the proposed method shows strong potential for industrial applications in wafer inspection and online surface monitoring.
Saiwei Microelectronics acquires Zhancheng Technology, adding MEMS chip design services and EDA software businesses
MEMS Consulting has learned that Sai Microelectronics recently announced the acquisition of a 56.24% stake in Qingdao Zhancheng Technology Co., Ltd. (hereinafter referred to as "Zhancheng Technology") for RMB 157 million. Following the completion of this transaction, Sai Microelectronics holds a total 61.00% stake in Zhancheng Technology, achieving a controlling stake in the company and adding MEMS chip design services and EDA software development to its portfolio. Zhancheng Technology is a National High-Tech Enterprise, a National "Key Small Giant" Enterprise for Specialized, Advanced, and Innovative Products, a National Key Integrated Circuit Design Enterprise, and a Shandong Province "Gazelle" Enterprise.
Deepen strategic cooperation between the two sides
Beijing Microchip Technology Co., Ltd., a wholly-owned subsidiary of Saiwei Semiconductor, made a strategic investment of RMB 5 million of its own funds in Zhancheng Technology, continuously tracking the operation and development status of Zhancheng Technology, and organizing Zhancheng Technology and the Beijing FAB3 foundry MEMS process technology team to conduct in-depth exchanges on the application of EDA software in the MEMS chip manufacturing field.
Over the past three years, the two sides have interacted sincerely and conducted in-depth discussions on industrial collaboration, gradually reaching a consensus on the competitive landscape and development direction of the MEMS industry, ultimately laying an important foundation for this strategic cooperation between the two parties.
Zhancheng Technology has many years of R&D experience in the field of parasitic parameter extraction. It can subsequently effectively cooperate with Saiwei Semiconductor's R&D work in the field of MEMS EDA, and further enhance Saiwei Semiconductor's comprehensive competitiveness in the field of MEMS chip manufacturing.