Automotive grade chips are introduced into OEMs, and half-bridge modules are supplied in batches
Xiyong Micro-Electronic Park announced on February 11 that China Resources Microelectronics held a new power module product launch conference, grandly launching a series of new products including various PIM modules, automotive main drive modules and IPM modules based on high-voltage super junction MOS , IGBT and SiC .
According to relevant persons in charge of China Resources Microelectronics, as of now, China Resources Microelectronics has achieved mass production of 56 automotive-grade power chips, which have officially entered the supply chain list of a certain OEM in Chongqing. Products represented by half-bridge power modules have been supplied in batches to many leading new energy vehicle companies in China.
The IGBT modules released by CR Micro in this new product launch are widely used in core components such as main drive inverters, on-board chargers (OBCs) and DC-DC converters. SiC modules include DCM series half-bridge power modules, MSOP series half-bridge power modules, and HPD series full-bridge power modules, which are mainly used in on-board chargers, main drive inverters and high-voltage DC converters of new energy vehicles. In addition, CR Micro also released dual-core MOS modules, which are used in body domain controllers of leading automotive customers. Currently, the cumulative shipments in the automotive field exceed 40 million.
China Resources Microelectronics' layout in Chongqing mainly includes a 12-inch power semiconductor wafer production line and an advanced power packaging and testing base, with a total investment of 11.75 billion yuan. The project aims to build a leading domestic automotive-grade semiconductor platform, covering the entire industrial chain of power semiconductors from wafer manufacturing to packaging and testing.
2-inch wafer production line: It will be officially put into operation in January 2023, with a planned monthly production capacity of 30,000 to 35,000 12-inch mid-to-high-end power semiconductor wafers, and equipped with 12-inch epitaxy and thin-film processes. Products cover medium and low voltage trench SGT MOS, high voltage super junction SJ MOS, etc., to meet automotive-grade requirements.
Power Packaging and Testing Base: The first medium and low voltage SGT power device will roll off the production line in December 2023, with a yield rate of 99.5%. The project took only 360 days from start to completion, and the construction speed is leading in the industry. The base focuses on the automotive electronics and industrial control markets, providing module-level, wafer-level and other packaging and testing services.
By 2025, the Chongqing Park has become the core incremental practice site of China Resources Microelectronics. The utilization rates of its 8-inch and 12-inch production lines are maintained at above 90%, and the 12-inch production capacity ramp-up is progressing smoothly, laying the foundation for listing on the Science and Technology Innovation Board and market expansion.