Chinese semiconductor thread II

[tokenanalyst]

Ultrathin aluminum layer-based DUV transparent thermal protection optical window​

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Abstract​

Extreme ultraviolet (EUV) light sources are critical for high-resolution lithography. For stable EUV output, real-time plasma monitoring is needed. However, broadband radiation of sources based on laser-produced plasma can induce thermal lensing in optical windows of detection systems, reducing observation accuracy and EUV generation efficiency. To solve this problem, thermal protection optical windows (TPO windows) are needed. Existing approaches, including multilayer all-dielectric coatings and transparent conductive coatings, often suffer from DUV absorption and fabrication complexity. This paper presents a DUV-transparent thermal protection window using an ultrathin aluminum (Al) layer. The fabricated TPO window achieved 67.7% transmittance at 266 nm, an average reflectance of 64% from UV to near-infrared (200–2500 nm) band, and over 96% in the mid-to-far infrared (2.5–11 μm) band. It also demonstrated excellent environmental stability, reducing thermal lensing by approximately 80% compared to bare substrates. These results indicate that ultrathin Al-based thermal protection windows are a practical and effective solution for enhancing the stability and measurement accuracy of EUV systems.

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[jx191]

<I. Technological Revolution in Domestic Lithography Machines

China's domestically produced lithography machines, employing laser-induced discharge plasma (LDP) technology, are expected to enter trial production in the third quarter of 2025. Featuring a compact design and a 40% reduction in energy consumption, this marks a significant step towards true self-reliance in the most cutting-edge semiconductor manufacturing field. This breakthrough may alter the traditional chip industry chain structure of "design abroad, manufacturing in East Asia, and application in China."

ASML, a traditional lithography machine giant, uses laser-induced plasma (LPP) technology in its EUV lithography machines. This technology relies on expensive and complex high-energy lasers to bombard tin droplets to generate plasma, and its control system is based on a precision FPGA. In contrast, the core of China's LDP technology lies in vaporizing the tin material between the electrodes and then converting it into a plasma state through high-voltage discharge. This "directional explosion" approach may be simpler and more efficient.

The Hyperion-1 prototype exhibits exciting features, such as a design that is one-third the size of ASML's, significantly reduced power consumption, and a clear manufacturing cost advantage. Although its power consumption is lower (50W vs. ASML's 250W), it has already achieved small-batch production of 5-3 nanometer nodes. Currently, its production capacity is approximately 10 wafers per hour, focusing on R&D and X-series chips. The plan is to launch Hyperion-2 by 2026, increasing production capacity to 150W/hour and achieving commercial production.>

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I know that post is controversial, but I think there are already EUV pilot lines in China, that is not just a EUV research lab, EUV pilot lines, a step closer to production, of course I think that the current systems are not even close to ASML, probably a few dozens wafers per hour like the post says, but the goal of 80 or even 100 wafers per hour by 2027 is a very high probability.
I think people inside this development in China already know where things are going and institutions and their companies are RUSHING to be first in the commercialization of EUV. I think, that most traditional supplier of lithography sub-systems like RS-Laser and Guowang Optical are now focus on KrF, ArF and ArFi, so they have to move fast.

Really interested stuff man. At this point it doesn't matter if China's EUV is only a couple dozen wafers per hour.

Even a dozen wafers would be enough to send the entire world into shock. Also the fact that we are seeing so many suppliers racing towards EUV shows that momentum is fast and they want to be at the front lines.