Ok I tried to get some (very approximate) number about needed photoresist.
they refer to 1ml/inch of photoresist needed per wafer, let's assume 10ml for 12'' wafers for lithography step.
they say "In total, there are 38 lithography exposures at 32nm/28nm, 15 of which are immersion exposures"
So it means for 28nm node is needed 380ml of photorsist per processed wafer, included 150ml for Arf immersion
we can see that photoresist's density is around 1 g/cm 3 (from 0.96 to 1.1), hence we have 380Kg total photoresist for 1000 wafers, included 150Kg immersion photoresist.
According to havoc's table, there is a current capacity of 3.5 tons/year (300Kg/month) of Arf photoresist. Even assuming is all for immersion and is all used just for 28nm, it means a maximum capacity of 2000 wpm (wafer per month) for 12'' wafers at 28nm node.
they refer to 1ml/inch of photoresist needed per wafer, let's assume 10ml for 12'' wafers for lithography step.
they say "In total, there are 38 lithography exposures at 32nm/28nm, 15 of which are immersion exposures"
So it means for 28nm node is needed 380ml of photorsist per processed wafer, included 150ml for Arf immersion
we can see that photoresist's density is around 1 g/cm 3 (from 0.96 to 1.1), hence we have 380Kg total photoresist for 1000 wafers, included 150Kg immersion photoresist.
According to havoc's table, there is a current capacity of 3.5 tons/year (300Kg/month) of Arf photoresist. Even assuming is all for immersion and is all used just for 28nm, it means a maximum capacity of 2000 wpm (wafer per month) for 12'' wafers at 28nm node.
