Chinese semiconductor industry

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tokenanalyst

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european_guy said:
After High-NA he thinks there will not be another big step, just cost optimization and refining of current machines. This is a big statement. But if there is someone that knows what he is talking about, is this man.
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Yes, it seems that will be the situation, if the plan is not to make the next big tool, ASML will focus on optimizing the performance of its EUV tools and expanding the usability of its DUV systems. Focusing more on the software side of lithography, perhaps working on AI-enhanced lithography, advance metrology, new yield optimization tools and lithography as a service.
Unless someone comes with a way to make E-Beam tool as performant as current scanners.
 
FairAndUnbiased

FairAndUnbiased

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tokenanalyst said:
Yes, it seems that will be the situation, if the plan is not to make the next big tool, ASML will focus on optimizing the performance of its EUV tools and expanding the usability of its DUV systems. Focusing more on the software side of lithography, perhaps working on AI-enhanced lithography, advance metrology, new yield optimization tools and lithography as a service.
Unless someone comes with a way to make E-Beam tool as performant as current scanners.
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This means a chance for China to catch up and overtake, as kW scale EUV from synchrotron radiation is simply on another level from LPP EUV in terms of intensity and spectral purity, as well as tunability to optimize for optics and photochemistry instead of being stuck with the energy of a core electron transition in Sn.

There's also the possibility of a mini synchrotron being built, at the 10s of meter diameter level, which would make it feasible to deliver to existing fabs.
 
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tokenanalyst

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FairAndUnbiased said:
This means a chance for China to catch up and overtake, as kW scale EUV from synchrotron radiation is simply on another level from LPP EUV in terms of intensity and spectral purity, as well as tunability to optimize for optics and photochemistry instead of being stuck with the energy of a core electron transition in Sn.

There's also the possibility of a mini synchrotron being built, at the 10s of meter diameter level, which would make it feasible to deliver to existing fabs.
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The Chinese are probably very lucky that all this geopolitical gibberish was happening right now and not years ago, like 2010.
Kudos to the Chinese government for investing money in researching tools like immersion lithography and EUV lithography from the beginning, even having access to foreign immersion tools. The same goes for other equipment such as etching, deposition, cleaning and metrology tools. Even considering the problem, Chinese factories HATED the idea of testing local tools to the point of forcing many Chinese SMEs to survive in niche markets like packaging, FPD, LED, power and solar. Just imagine if the Chinese have to develop everything from scratch today.
Another thing is that China's focus on packaging will likely pay off big in a post-Moore era.​
 
Jianguo

Jianguo

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WTAN said:
The good news is that the Wuhan Uni and Huazhong Uni Team seems to have already developed a MOPA C02 Laser of at least 27kw Laser Power.
This is similar to the Gigaphoton MOPA C02 Laser which also produces 27kw of Laser Power. The Gigaphoton EUV Light Source uses a 27Kw Laser to produce Source Power of 250W.
The current Model ASML EUVL NXT3400 uses a 30kw MOPA C02 Laser and also produces Source Power of 250W.
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Quote:
"It can explain the fact that the CE of 10 ps PP is greater than that under the 10 ns PP condition in all CO2 pulse energy ranges, as shown in
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a. This optimized high-CE PP technology enabled 20 kW CO2 laser to realize a 250 W EUV source in several minutes. In 2019, the driver laser system was upgraded by improving the optical design of the pre-amplifier and 3 main amplifiers. As a result, a 27 kW CO2 laser power was achieved by the upgraded configuration. In the latest data, a higher EUV power greater than 360 W with a CE greater than 5% in short term was demonstrated, and 270 W stable operation in long term was achieved."

Figure 8
1663875030790.png

If China was able to produce 270W stably, as in commercially viable, with the "latest data", I would be very curious knowing how long ago is this latest data considering they developed a 27kW MOPA laser in 2019.
 
siegecrossbow

siegecrossbow

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tokenanalyst said:
The Chinese are probably very lucky that all this geopolitical gibberish was happening right now and not years ago, like 2010.
Kudos to the Chinese government for investing money in researching tools like immersion lithography and EUV lithography from the beginning, even having access to foreign immersion tools. The same goes for other equipment such as etching, deposition, cleaning and metrology tools. Even considering the problem, Chinese factories HATED the idea of testing local tools to the point of forcing many Chinese SMEs to survive in niche markets like packaging, FPD, LED, power and solar. Just imagine if the Chinese have to develop everything from scratch today.
Another thing is that China's focus on packaging will likely pay off big in a post-Moore era.​
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Ten years ago:

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FairAndUnbiased

FairAndUnbiased

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Remember my comment about compact kW level synchrotron sources? This paper just came out.

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160 m circumference = 25 m radius.

It is plausible that the radius can be reduced down to 10-15 m, which is possible since SURF III synchrotron UV source at NIST is about 1 m radius, though not optimized for power but for cost and flexibility.

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The Cymer LPP source is about 5 m wide.
 
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