Suzhou Matrix Optoelectronics obtains patent for lithography machine exposure accuracy detection, effectively improving the spatial resolution of lithography machine exposure accuracy uniformity
Suzhou Matrix Optoelectronics Co., Ltd. obtained a patent entitled "High spatial resolution and high-precision detection method for exposure accuracy of lithography machines", with authorization announcement number CN119247707B, and the application date of December 2024.
The patent abstract shows that the present invention provides a high spatial resolution and high precision detection method for the exposure accuracy of a lithography machine, which divides the exposure area of the mask into several detection areas, and transfers the characteristic pattern to the wafer after the photolithography etching process to form several patterns on the entire wafer, and outputs an unbalanced voltage between another group of metal electrodes by inputting an electrical signal to a group of metal electrodes on the pattern, thereby drawing a Mapping diagram of the unbalanced voltage according to the coordinates of the entire wafer, and reflecting the consistency of the exposure accuracy of the lithography machine according to the distribution of the Mapping diagram. The entire exposure area of the wafer is divided into a dot matrix distribution based on the pattern, which can effectively improve the spatial resolution of the uniformity of the exposure accuracy of the lithography machine, and the smaller the pattern size, the higher the spatial resolution; in addition, through the evaluation method of the electrical performance of the pattern, the measurement accuracy of the unbalanced voltage can reach less than 1‰, achieving the purpose of high-precision detection of exposure.
