Anyone joining Jordan "annihilation" Schneider's podcast should not be given any kind of attention when it comes to Chinese chip making. Dylan patel and Asianometry are the worst in this space.
Chinese semiconductor thread II
- Thread starter vincent
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Anyone joining Jordan "annihilation" Schneider's podcast should not be given any kind of attention when it comes to Chinese chip making. Dylan patel and Asianometry are the worst in this space.
AI 3D packaging and stacking is going to be the normal for Edge AI in the future. Huge gain in prefill and decode speed.
Mechanisms of Film-Formation-Related Defects in EUV Photoresists for Sub-3 nm Nodes and Synergistic Materials–Process–Intelligence Co-Optimization
Abstract
With the advancement of High-NA EUV lithography and the continued evolution of transistor architectures toward GAA and CFET, semiconductor manufacturing has entered the sub-3 nm technology node era. At advanced nodes, photon shot noise becomes increasingly significant, while the process tolerance window narrows substantially. Photoresist film-formation-related defects may originate from multiple stages of the fabrication process, including coating, exposure, post-exposure bake, development, and etching/stripping, and are strongly influenced by microscopic stochastic effects. However, the isolated optimization of materials, processes, or intelligent control strategies still suffers from significant limitations. Therefore, this review systematically examines the formation mechanisms and cross-process evolution of photoresist film-formation-related defects within the development trajectory of advanced lithography. An integrated materials–process–intelligence co-optimization framework is proposed to elucidate the coupling mechanisms among these three dimensions and the construction of a full-chain closed-loop control strategy. The current challenges and future development directions are summarized, providing optimization insights for both academic research and industrial implementation. This review aims to establish a defect-control framework integrating fundamental understanding with engineering considerations, thereby supporting low defectivity, high robustness, and improved manufacturability for sub-3 nm node patterning.
ECO Optoelectronics Showcased Full Range High End Visual Sensors For Semiconductor Inspection
ECO Optoelectronics showcased its full range of high-end imaging products at this year's Vision China, focusing on cutting-edge applications in precision manufacturing industries such as semiconductors, 3C electronics manufacturing, and new energy, demonstrating its technological accumulation and innovative leadership in the field of industrial sensing.
Semiconductor Industry - Precision Testing at the Chip Level
Focusing on the pain points of semiconductor process inspection, ECO Optoelectronics provides a precise sensing solution across the entire chain, breaking down technical barriers and achieving precise sensing at the chip level.
105MP high-speed area scan camera
Equipped with a 100Gbps CoF interface and an ultra-high frame rate of 112fps, it achieves high-speed, real-time, and latency-free transmission, meeting the high-speed and precision testing requirements in semiconductor manufacturing processes.
SG4050 Linear Spectral Confocal Sensor
With an ultra-large measurement field of view of 20.4mm and a scanning speed of 18kHz, its technical specifications reach the international advanced level, improving the accuracy and efficiency of semiconductor packaging processes.
8K High-End TDI Linear Scan Camera
With an ultra-high line frequency of 1000kHz for improved efficiency and speed, and upgraded sensitivity in the ultraviolet band, it can accurately capture wafer surface defects even in low light.
Intelligent focusing system
It supports a 66mm target surface with a wide field of view and 6.3kHz high-speed defocus sampling, easily meeting the high-speed real-time focusing needs of complex textures on the surface of wafers with images.
The Institute of Microelectronics has made significant progress in the field of 3D simulation of DRAM etching processes.
As DRAM manufacturing processes continue to shrink, controlling the etching morphology of the active region fin structure has become a key bottleneck for improving yield. The industry has widely observed the wiggling AA effect, where non-uniform sidewalls and bending distortion appear in the fin structure, severely reducing capacitance efficiency and device reliability. However, its physical root cause has long been unclear, lacking systematic characterization and mechanistic models, making it difficult to precisely control the etching process.
To address the aforementioned challenges, Researcher Rui Chen from the EDA Center of the Institute of Microelectronics, Chinese Academy of Sciences, in collaboration with Senior Engineer Junjie Li and Senior Engineer Jing Wen from the Pilot Center, and Professor Lado Filipovic from the Vienna University of Technology, innovatively integrated focused ion beam scanning electron microscopy (FIB-SEM) three-dimensional reconstruction technology with etching process models. By combining simulations and experiments of the etching process under different process conditions, they revealed the core mechanism and regulation mechanism of the wiggling AA effect.
The research findings were recently published in Communications Engineering, a sub-journal of Nature's engineering field, entitled "3D reconstruction and etching profile simulation for wiggling active area effect in dynamic random access memory manufacturing." Ziyi Hu, a doctoral student at the Institute of Microelectronics, is the first author of the paper, and Rui Chen, a researcher at the Institute of Microelectronics, Junjie Li, a senior engineer, and Professor Lado Filipovic of the Vienna University of Technology are the co-corresponding authors. This research was supported by the National Key Research and Development Program of China (Young Scientists Program), the National Natural Science Foundation of China (General Program), and the International Partnership Program of the Chinese Academy of Sciences.
To address the aforementioned challenges, Researcher Rui Chen from the EDA Center of the Institute of Microelectronics, Chinese Academy of Sciences, in collaboration with Senior Engineer Junjie Li and Senior Engineer Jing Wen from the Pilot Center, and Professor Lado Filipovic from the Vienna University of Technology, innovatively integrated focused ion beam scanning electron microscopy (FIB-SEM) three-dimensional reconstruction technology with etching process models. By combining simulations and experiments of the etching process under different process conditions, they revealed the core mechanism and regulation mechanism of the wiggling AA effect.
The research findings were recently published in Communications Engineering, a sub-journal of Nature's engineering field, entitled "3D reconstruction and etching profile simulation for wiggling active area effect in dynamic random access memory manufacturing." Ziyi Hu, a doctoral student at the Institute of Microelectronics, is the first author of the paper, and Rui Chen, a researcher at the Institute of Microelectronics, Junjie Li, a senior engineer, and Professor Lado Filipovic of the Vienna University of Technology are the co-corresponding authors. This research was supported by the National Key Research and Development Program of China (Young Scientists Program), the National Natural Science Foundation of China (General Program), and the International Partnership Program of the Chinese Academy of Sciences.
Huacheng Electronics showcases its core components at FINE 2026
From June 10th to 12th, the 2026 Future Industry New Materials Conference ( FINE 2026 ) was grandly held in Shanghai. The exhibition focused on five core areas: advanced semiconductors, advanced batteries, lightweighting, low-carbon sustainability, and thermal management, creating a full-chain innovation display and cooperation platform encompassing "cutting-edge technology new materials core components end-end applications." Huacheng Electronics sincerely thanks every industry colleague who visited our booth to join us in this future industry innovation feast and explore new opportunities for the synergistic development of new materials and precision components.
At this exhibition, Huacheng Electronics showcased its core component products for the carbon materials industry, covering a range of products including RF power supplies, gas mass flow controllers, gas pressure controllers , and miniature vacuum gauges. Currently, Huacheng Electronics' products and solutions have gained recognition from numerous customers, holding a significant market share in the diamond culture industry.
