@ansy1968
Wouldn't be nice if China were able to catch up to 90nm in 2005 and 28nm in 2015?
What do you think of this?
Smee 28nm won't be able to do 14nm with multipattern and 5 units plan to deliver in 2022, 10 units in 2023.
Each 28nm unit cost about 300million yuan
In 2024 , 14nm improved version will come out with dual stage working stages.
No, this updated 14nm litho equipment in 2024 won't able to do 7nm with multipatterning need another improvement
东方晶源微电子科技（北京）有限公司（简称东方晶源）集成电路检测装备研发生产基地项目作为承担国家重要战略
电子束晶圆缺陷检测设备（EBI）应用电子束扫描技术，对硅片表面进行高分辨率成像，通过智能算法检测制造过程中的物理和电气缺陷，为集成电路的开发与量产提供高精度的检测和良率解决方案，这是国内集成电路产业链供应链自主可控的关键一步。
它利用扫描电镜或叫电子束扫描的原理，通过一个高压加速的电子去打到硅片的表面产生的二次电子，然后通过一个传感器去检测二次电子，通过扫描同步的方式实现两维的图像，此两维图像能够达到纳米级的分辨率。
既然要造国产光刻机，那么光刻机曝光后的曝光质量检测也非常重要，也需要国产化。像关键尺寸量测这类设备以前100%依赖进口，国内仅东方晶源能造，东方晶源研发生产基地对于大规模量产这类设备和进一步研发适用于EUV的量测设备具有重要意义。
上海精测CD-SEM设备没有，这设备是和光刻机配套研发的
电子束缺陷检测设备（简称 EBI）与电子束关键尺寸测量设备(简称 CDSEM) 不是同一种设备，功能上有区别的。目前上海精测没有CDSEM设备，再说上海精测也不是光刻机产业联盟的成员，而东方晶源却是一直参与国产 28nm光刻机开发进程的。
时代不同了，现在上微不是一个人在战斗，比如本贴的东方晶源也是战友之一。再说当年90nm本来就不打算量产的，即使这样上微600系列的KrF，i-Line还是可以凑合用的，现在也有产线正在用，只不过产率底了些。
电子束关键尺寸测量不是光学测量，这种设备分辨率更高 用于光刻曝光后的线宽测量。上海精测没有这种产品
上微新干式双工件台光刻机在ICRD验证。国产大硅片、光刻胶等也一起在那里配合光刻机验证。ICRD已经把16nm及以下工艺验证线上除浸没光刻机外的其他一些进口设备全换成了国产设备，这条线产能约5000片／年，目前正在调试。
5000片/年关键是用全国产设备生产的。目前上海打造中国集成电路全产业链国产化体系建设正在加快推进中，ICRD 16nm以下工艺验证线重点建设自主可控集成电路产业链，为CPU、5G 通信芯片等核心产品提供自主制造的服务，为上海12 英寸生产线提供HKMG、FinFET 等关键共性工艺的研发服务，为国产装备及材料提供高水平验证服务，并可与大生产线进行无缝衔接。
不过明年2022至少还有5台28nm光刻机出货，2023年可以再出货10台左右。
假定28nm光刻机单价是3亿人民币，那么顺利的话上微2023年光是浸没光刻机的销售额就是30亿人民币左右
不能 14nm，否则就不叫28nm光刻机了
14nm , 2024年左右会有改进型号
24年能打通28nm全国产产业链也很牛逼了！
28nm节点平面晶体管不需要SADP，FinFET鳍型晶体管形成才需要
Dongfang Jingyuan Microelectronics Technology (Beijing) Co., Ltd. (referred to as Dongfang Jingyuan) integrated circuit testing equipment research and development and production base project as an important national strategy Electron beam wafer defect inspection equipment (EBI) uses electron beam scanning technology to perform high-resolution imaging on the surface of silicon wafers, and uses intelligent algorithms to detect physical and electrical defects in the manufacturing process, providing high precision for the development and mass production of integrated circuits This is a key step in the independent and controllable supply chain of the domestic integrated circuit industry chain. It uses the principle of scanning electron microscopy or electron beam scanning, through a high-voltage accelerated electron to hit the secondary electrons generated on the surface of the silicon chip, and then through a sensor to detect the secondary electrons, through the scanning synchronization method to achieve two-dimensional Image, this two-dimensional image can achieve nanometer resolution. Since the domestic lithography machine is to be manufactured, the exposure quality inspection after exposure of the lithography machine is also very important, and localization is also required. Previously, equipment such as critical dimension measurement was 100% dependent on imports, and only Dongfang Jingyuan can manufacture it in China. Dongfang Jingyuan's R&D and production base is of great significance for mass production of such equipment and further research and development of measuring equipment suitable for EUV. Shanghai Jingce CD-SEM equipment does not have, this equipment is the same as the lithography machine
