A reappraisal of China's semiconductor strategy
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Quickie
Colonel
I doubt anyone can just arbitrarily withdraw his patent. What if an investor has already invested billions of dollars in an invention under the patent? All the investment would be down the drain just like that. Who is going to compensate for the loss in terms of money and the closing down of the company
. The patent holder?
Depends on the wording of the contract.
But you choose an example when the patent holder already made licences, but it has all his right to not to allow anyone else to use his patents.
Even if the patent is key on certain fields.
Quickie
Colonel
Every individual/company is seen as equal under the law, Playing favoritism towards one company over another can be seen as unfair competition in the eyes of the law and shouldn't be allowed.
See localizer's post in reply to yours.
The patent owning company can choose to license its IP with equal rules to everyone, OR to not to give the right to anyone , under common (English) law.
PikeCowboy
Junior Member
^well according to that wiki link, the patent holder has to make some compromises to his rights if his version of the technology is accepted as a part of an international standard. So often its not the value of the technology it self but rather the value comes from the fact that it is the most commonly used variant of that technology... it might not even be the best variant.
so are the actions of the SD and WiFi group against FRAND terms? Can HW sue SD/WiFi or the relevant licensing companies in a European court? or even a US court for that matter... lol 法治国家 and all that y'know
so are the actions of the SD and WiFi group against FRAND terms? Can HW sue SD/WiFi or the relevant licensing companies in a European court? or even a US court for that matter... lol 法治国家 and all that y'know
Quickie
Colonel
I think the discussion was always in regard to the former. See vincent's post.
Government law is always superior to the common law. ( I don't know what is the source of the "equal handling", case or whatever law)
So the Capitol always can make rules specifically targeting given companies, and forcing parties to restrict the access of patents.
I am sure it exist anyway, the USA military patents doesn't have equal handling rules : P
So the Capitol always can make rules specifically targeting given companies, and forcing parties to restrict the access of patents.
I am sure it exist anyway, the USA military patents doesn't have equal handling rules : P
I usually don't link SCMP since they tend to have no idea what they are on about, but:
Chinese scientists say they have created a transistor that will increase the performance of microchips exponentially and dramatically reduce their energy use.
The most advanced computer chips on the market today use seven-nanometre transistors. Professor Yin Huaxiang said his team had developed 3nm transistors – about the width of a human DNA strand – and that tens of billions of them could fit on a fingernail-size chip.
The smaller transistors become, the more can be fitted onto chips, increasing the performance of a processor exponentially, said Yin, deputy director of microelectronics device and integrated technology at the Institute of Microelectronics, the Chinese Academy of Sciences in Beijing.
Transistors are the building blocks of processors. Those built with 3nm transistors would increase computing speed and cut energy consumption, Yin said. So, a smartphone user, for instance, could play games that demanded lots of computing power all day without the need to recharge batteries.
Chip developers at the Institute of Microelectronics believe their breakthroughs in transistors and microchips will propel Chinese technology into a serious rivalry with companies such as Samsung. Photo: AP
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The Chinese team, whose research was published in part in peer-reviewed journal IEEE Electron Device Letters this month, had to overcome major obstacles, Yin said. One was the Boltzmann Tyranny, 19th century Austrian physicist Ludwig Boltzmann’s description of a problem involving the distribution of electrons in a space.
For chip developers, this meant that as more and smaller transistors went into microchips, the heat generated by the electricity the transistors needed would burn the chip.
Physicists have proposed solutions to this problem. Yin’s team, using a method known as negative capacitance, was able to power transistors by using half the theoretical minimum amount of electricity required, he said.
Commercialisation could take a few years as the team worked on materials and quality control.
“This is the most exciting part of our work. It is not just another new finding in a laboratory. It has a high potential for real, serious applications,” Yin said. “And we have the patent.”
The breakthrough would put China into a “head-on competition with the world’s top players at the very front line of chip development”, Yin said.
“In the past, we were watching others fight. Now we are fighting the others.”
While scientists develop a new generation of transistors, the groundbreaking commercial potential of the technology is some time away, they say. Photo: Reuters
Share:
In Beijing, a Tsinghua University professor who studied future chip technology said China’s development was rapidly catching up with Western countries as a result of the trade tariffs war being fought out by Beijing and Washington.
“A gap remains, [and] it is unlikely to close overnight with a single breakthrough,” said the academic who declined to be named because of the sensitivity of the work.
While there are transistors about the size of an atom – half a nanometre – in development in China, other countries have joined the race to bring 3nm transistors to market.
Samsung in South Korea said it planned to complete the development of a 3nm transistor by the first half of next year.
Compared to 7-nm technology, Samsung said a processor built with its 3-nm transistors would use half as much power to achieve a 35 per cent higher performance.
The company did not say when it expected those chips to enter production.
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The relevant peer-reviewed paper:
Abstract:
High-performance negative capacitance p-type FinFETs (p-FinFETs) with a 3-nm-thick ferroelectric (FE) hafnium zirconium oxides (Hf 0.5 Zr 0.5 O 2 ) layer are fabricated based on a conventional high-κ metal gate FinFETs fabrication flow. The devices show improved subthreshold swing values [34.5 mV/dec for 500-nm gate length (L G ) and 53 mV/dec for 20-nm-L G devices] and slight hysteresis voltages (~9 mV for L G = 500 nm and ~40 mV for L G = 20-nm transistors). With the integrated FE film, a strong driving current enhancement (up to 260%) is also obtained compared with that of conventional FinFETs. The inherent reasons for the improved characteristics contribute to the low-interface state density (D it ) and the perfect channel electrostatic integrity.
Chinese scientists say they have created a transistor that will increase the performance of microchips exponentially and dramatically reduce their energy use.
The most advanced computer chips on the market today use seven-nanometre transistors. Professor Yin Huaxiang said his team had developed 3nm transistors – about the width of a human DNA strand – and that tens of billions of them could fit on a fingernail-size chip.
The smaller transistors become, the more can be fitted onto chips, increasing the performance of a processor exponentially, said Yin, deputy director of microelectronics device and integrated technology at the Institute of Microelectronics, the Chinese Academy of Sciences in Beijing.
Transistors are the building blocks of processors. Those built with 3nm transistors would increase computing speed and cut energy consumption, Yin said. So, a smartphone user, for instance, could play games that demanded lots of computing power all day without the need to recharge batteries.
Chip developers at the Institute of Microelectronics believe their breakthroughs in transistors and microchips will propel Chinese technology into a serious rivalry with companies such as Samsung. Photo: AP
Share:
The Chinese team, whose research was published in part in peer-reviewed journal IEEE Electron Device Letters this month, had to overcome major obstacles, Yin said. One was the Boltzmann Tyranny, 19th century Austrian physicist Ludwig Boltzmann’s description of a problem involving the distribution of electrons in a space.
For chip developers, this meant that as more and smaller transistors went into microchips, the heat generated by the electricity the transistors needed would burn the chip.
Physicists have proposed solutions to this problem. Yin’s team, using a method known as negative capacitance, was able to power transistors by using half the theoretical minimum amount of electricity required, he said.
Commercialisation could take a few years as the team worked on materials and quality control.
“This is the most exciting part of our work. It is not just another new finding in a laboratory. It has a high potential for real, serious applications,” Yin said. “And we have the patent.”
The breakthrough would put China into a “head-on competition with the world’s top players at the very front line of chip development”, Yin said.
“In the past, we were watching others fight. Now we are fighting the others.”
While scientists develop a new generation of transistors, the groundbreaking commercial potential of the technology is some time away, they say. Photo: Reuters
Share:
In Beijing, a Tsinghua University professor who studied future chip technology said China’s development was rapidly catching up with Western countries as a result of the trade tariffs war being fought out by Beijing and Washington.
“A gap remains, [and] it is unlikely to close overnight with a single breakthrough,” said the academic who declined to be named because of the sensitivity of the work.
While there are transistors about the size of an atom – half a nanometre – in development in China, other countries have joined the race to bring 3nm transistors to market.
Samsung in South Korea said it planned to complete the development of a 3nm transistor by the first half of next year.
Compared to 7-nm technology, Samsung said a processor built with its 3-nm transistors would use half as much power to achieve a 35 per cent higher performance.
The company did not say when it expected those chips to enter production.
===============================
The relevant peer-reviewed paper:
Abstract:
High-performance negative capacitance p-type FinFETs (p-FinFETs) with a 3-nm-thick ferroelectric (FE) hafnium zirconium oxides (Hf 0.5 Zr 0.5 O 2 ) layer are fabricated based on a conventional high-κ metal gate FinFETs fabrication flow. The devices show improved subthreshold swing values [34.5 mV/dec for 500-nm gate length (L G ) and 53 mV/dec for 20-nm-L G devices] and slight hysteresis voltages (~9 mV for L G = 500 nm and ~40 mV for L G = 20-nm transistors). With the integrated FE film, a strong driving current enhancement (up to 260%) is also obtained compared with that of conventional FinFETs. The inherent reasons for the improved characteristics contribute to the low-interface state density (D it ) and the perfect channel electrostatic integrity.
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